MOSFET 1200V 3A Search Results

Contextual Info: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS

IXFA6N120P

Abstract: IXFH6N120P IXFH6N120 IXFP6N120P
Contextual Info: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions

HiperFET

Abstract: MOSFET 1200v 3a IXFA6N120P
Contextual Info: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions

Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A Ω ≤ 2.75Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions

APT7M120B

Abstract: APT7M120S MIC4452
Contextual Info: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

mosfet 1200V 3A

Abstract: APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a
Contextual Info: APT7M120B APT7M120S 1200V, 7A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

MOSFET 1200v 3a

Contextual Info: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

Contextual Info: SCT2450KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 450m ID 10A PD 85W TO-247 (1) (2) (3) Inner circuit (2) Features (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 (1) 3) Fast reverse recovery

APT7F120B

Abstract: APT7F120S MIC4452 DIODE 240v 3a
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT7F120B

Abstract: APT7F120S MIC4452
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.90Ω Max, trr ≤190ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

3A, 50V BRIDGE

Abstract: 25c016
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

IEGT 4500V

Abstract: n mosfet depletion 600V IEGT IGBT 4500V mitsubishi igbt cm
Contextual Info: The CSTBT, a New 1200V Power Chip with Low VCE sat and Robust Short Circuit Withstanding Eric Motto*, John F. Donlon*, Yoshifumi Tomomatsu*, Shigeru Kusunoki* Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, Hideo Iwamoto* * Fukuryo Semicon Engineering Corporation, Fukuoka, Japan

IEGT 4500V

Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm
Contextual Info: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu*, Shigeru Kusunoki*, Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Hideo Iwamoto*, Eric R. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan

Contextual Info: SSR3A High Speed 3 Amp Solid-State Relay Key Features • •   6 ns Switching Speed 0 to 5 MHz input frequency 60 ns minimum pulse width Power and signal inputs isolated from sources.  Easy replacement of IGBTs NO Resoldering Necessary! Figure 1 - SSR3A Simplified Circuit Diagram

e05a

Abstract: STTA312B h5ad
Contextual Info: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTA312B(-TR) TURBOSWITCH " A " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f(av ) 3A V rrm 1200 V V f (max) 1 .7V trr (typ) 65 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING O PERATIONS:

STTA312B

Contextual Info: STTA312B -TR  TURBOSWITCHTM "A" . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 1200 V VF (max) 1.7 V trr (typ) 65 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

STTA312B

Contextual Info: STTA312B -TR  TURBOSWITCHTM ”A” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM VF (max) 1200 V 1.7 V trr (typ) 65 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

H BRIDGE inverters using igbt

Abstract: difference between inverter and ups difference between IGBT and MOSFET IN inverter n Power mosfet depletion
Contextual Info: New MEGA POWER DUAL IGBT Module with Advanced 1200V CSTBT Chip Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA

MOSFET 1200v 3a

Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Contextual Info: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with