MOSFET 1300 F2 Search Results

Photocathode S-25

Contextual Info: PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio IMAGING COMPARISON Using Resolution Test Chart • Imaging Conditions Object illuminance: 0.1 lx Lens: FUJINON-TV Zoo-m Lens/H6x 12.5R :F1.2/f2

F1 J37

Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
Contextual Info: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

FUJINON-TV Zoom

Abstract: FUJINON-TV Zoom Lens/H6x 12.5R fujinon ccd diode datasheet N7640 conditioning circuits for window TV on/off sensor mark ccd N7220 RS-170 2n7640
Contextual Info: PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio IMAGING COMPARISON Using Resolution Test Chart • Imaging Conditions Object illuminance: 0.1 lx Lens: FUJINON-TV Zoom Lens/H6x 12.5R :F1.2/f2

Contextual Info: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from

MOSFET 1300 F2

Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET

c7a series vishay capacitor

Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR
Contextual Info: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

RF POWER VERTICAL MOSFET 1000 w

Abstract: AK 3913
Contextual Info: POLYFET R F DEVICES M7E t • 7211G01 ODGÜ1D1 1 ■ PLYF T - 39-12 POLYFET RF DEVICES F2043 PATENTED GOLD METALLIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse

T-39W F2044

Abstract: RF POWER VERTICAL MOSFET 1000 w
Contextual Info: POLYFET R F DEVICES 4?E D MÊ 7 5 4 1 0 0 1 0 0 0 0 1 0 5 t. • PLYF T - 3 9 -/ / POLYFET RF DEVICES F2044 PATENTED GOLD METALLIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse

F1 J37

Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
Contextual Info: Preliminary Data Sheet August 2004 AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Document Number: MRF19125 Rev. 8, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MOSFET 1300 F2

Abstract: 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 8, 10/2008 RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

232273461009L

Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

mmds

Abstract: AGR26180EF J500 JESD22-C101A
Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

52521

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2. 0 G Hz . S u i ta b l e fo r T D MA , C D M A a n d mul ti c arri er ampl i fi er

J493

Abstract: GX-0300-55-22
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier

AGR26180EF

Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110 MRF5S21150SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line

Contextual Info: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet

100B100JCA500X

Abstract: 465B CDR33BX104AKWS MRF19125 MRF19125S
Contextual Info: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: FU JI 2SK2687-01 N-channel MOS-FET S iL lM s u lt ìU e FAP-IIIB Series 30V > Features - o,oin 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

465B

Abstract: CDR33BX104AKWS MRF19125 MRF19125S MRF19125SR3
Contextual Info: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from