MOSFET 200A TIME SWITCH SPEED OFF Search Results

MJ10200

Abstract: MC13528 MTE200N05 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102
Contextual Info: AR133 mi lllililll g M ilM MULTICHIP POWER MOSFETS BEAT BIPOLARS AT HIGH-CURREIUT SWITCHING iMMHi By W arren Schultz Motorola Inc. Power Products Division Reprinted by Permission of ELECTRONIC DESIGN, June 14, 1 9 8 4 . 1984, Hayden Publishing Co., Inc.

200V 200A mosfet

Abstract: mosfet 400a 200V N mosfet 100v 200A "MOSFET Module" power mosfet 200A STY100NS20FD mosfet 200A time switch speed off 200 ampere MOSFET datasheet welding mosfet QJD0240002
Contextual Info: QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other

diode C209

Abstract: IGBT C206 10OnH 20QA IRGNI200F06 302CL MOSFET ior 144 lc108
Contextual Info: International 1«R]Rectifier PD-9.976B IRGNI200F06 "CHOPPER" IGBT I N T - A - P A K _Fast Speed IGBT High Side Switch VŒ = 600V .Rugged Design .Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail"

NTE2995

Contextual Info: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC

IRGKI200F06

Abstract: c186 diode
Contextual Info: International [k>rîRectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK Low Side Switch -O J V ce=600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail“

IRFB3077

Abstract: how mosfets connect parallel AN4108 APP4108 CR2025 MAX5048 MAX5054 A Simple Rise and Fall Time Waveform Control parallel connection of MOSFETs
Contextual Info: Maxim > App Notes > MEASUREMENT CIRCUITS SIGNAL GENERATION CIRCUITS PROTECTION AND ISOLATION Keywords: SPST, bipolar power switch, transient generation, test, voltage impulses, test load, switch design, power-circuit testing, power-supply test, fault testing

L200A

Contextual Info: International S Rectifier PD-9.976B IRGNI200F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V •Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail" losses lc = 200A

ACS756

Abstract: em 235 stepper em 499 stepper motor ACS712 A3930 A3986 stepper motor em 235 A3931 ACS714 UGN3177 HALF EFFECT SENSOR
Contextual Info: Avnet Memec – The Source of Innovation www.avnet-memec.eu ALLEGRO PRODUCT SELECTOR GUIDE 2008 04/2008 www.allegromicro.com CREATE INNOVATE ACCELERATE CURRENT SENSORS ALLEGRO‘S UNI- OR BIDIRECTIONAL CURRENT SENSORS OFFER A UNIQUE SOLUTION KEY FEATURES • Very smal package size

manual Bst Tiny 20

Abstract: all n type mosfet switch ic for notebook cpu core dc to dc conversion MAX17026 MAX15018 MAX15021 offline switcher MAX5945 MAX15039 MAX8566ETJ MAX8646
Contextual Info: Power Solutions for Enterprise Management 1st Edition January 2009 Power solutions for computing, datacom, and telecom PowerMind PMBus™ pages 2, 3 PowerMind DC-DC conversion pages 4–10 Isolated DC-DC converters page 15 SYSTEM AND POWER MANAGEMENT MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It

150N06

Contextual Info: Prelim inary Data Sheet OMD150N06FL OMD6OL6OFL OMD120N10FL QMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 6 0 0 Volt, 50 To 150 A m p M o d u l e s With Int ern al G a t e Drive. H - B r i d g e C o n f i g u r a t i o n FEATURES

NTE2941

Contextual Info: NTE2941 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:

sot-23 pinout

Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Contextual Info: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 1N50K-TA Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N75 Preliminary Power MOSFET 7.0A, 750V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N75 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

DIODE 929

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80Z Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

14n50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N75 Preliminary Power MOSFET 7.0 Amps, 750 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N75 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

mosfet 400V

Abstract: 20n40
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 14N40K-MT Preliminary Power MOSFET 14A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 14N40K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and