MOSFET 452 Search Results

300 Amp mosfet

Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH

AN569

Abstract: MTW20N50E
Contextual Info: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

TL 188 TRANSISTOR PIN DIAGRAM

Abstract: AN569 MTY20N50E
Contextual Info: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

eft 317 transistor

Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
Contextual Info: 5 V Relay Driver Socket 12 V Relay Driver Socket Bipolar Relay Driver Socket - NUD3105 MOSFET Relay Driver Socket - NUD3112 Water Valve Relay Vibrator Motor Microprocessor Microprocessor 24 V Relay Driver Socket MOSFET Relay Driver Socket - NUD3124 Window

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

diode marking 226

Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
Contextual Info: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

D8154

Abstract: ZXMN2F30FH
Contextual Info: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

Contextual Info: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.

Contextual Info: PD - 9.1240C International ie R Rectifier IRF7304 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V qss = -20 V

Contextual Info:  PI2121  Series 8 Volt, 24 Amp Full-Function Active ORing Solution Description Features The  PI2121 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET designed for use in redundant

IRFD9220

Contextual Info: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

PI2121

Abstract: PI2121-00-LGIZ
Contextual Info: PI2121 TM Cool-ORing Series 8 Volt, 24 Amp Full-Function Active ORing Solution Description Features TM The Cool-ORing PI2121 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET designed for use in redundant

Contextual Info: P D - 9 .1 2 6 4 C International IG R Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching Vqss = -30V ^ D S (o n) = 0.09Q

Si7625DN

Abstract: S10-0638-Rev si7625
Contextual Info: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

mtn4n60

Abstract: 4N60 application note mosfet 4n60 power supply mosfet 4n60 MT*4n60 4N60 MTN4N60FP C408F TO-220F DSA006750
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN4N60FP Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 2.2Ω ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

5N60

Abstract: MTN5N60FP
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN5N60FP Spec. No. : C408FP-A Issued Date : 2009.04.20 Revised Date : Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 2.5Ω ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET