MOSFET 500V 10A Search Results

FSS430

Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70

B20NM50FD

Abstract: P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD STF20NM50D ZVS phase-shift converters
Contextual Info: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STF20NM50D STB20NM50FD 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC

20nm50

Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP V435
Contextual Info: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A

20NM50

Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
Contextual Info: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A

Contextual Info: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A

STP20NM50FP

Abstract: 20nm50 STB20NM50 STB20NM50-1 STP20NM50
Contextual Info: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A 20 A

DM t 96 10a 250v

Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF10N50CF

Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP

P11NK40Z

Abstract: P11NK40 P11NK40ZFP STP11NK40Z
Contextual Info: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP

P channel MOSFET 1A

Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

20nm50

Abstract: N-Channel mosfet 400v to220 STB20NM50-1 STP20NM50 STP20NM50FP
Contextual Info: STP20NM50 - STP20NM50FP STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/TO-220FP/I²PAK MDmesh Power MOSFET TARGET DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM50/FP 500V <0.230Ω 20 A STB20NM50-1 500V <0.23Ω 20 A TYPICAL RDS(on) = 0.20Ω

2E12

Abstract: 3E12 FSL430R4 JANSR2N7398
Contextual Info: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

20nm50

Contextual Info: STP20NM50 - STP20NM50FP STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/TO-220FP/I PAK MDmesh Power MOSFET TARGET DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM50/FP 500V <0.230Ω 20 A STB20NM50-1 500V <0.23Ω 20 A TYPICAL RDS(on) = 0.20Ω

BUZ45B

Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
Contextual Info: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as

250V 10A TF 106

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: PD - 94167 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.53Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

mosfet 20A 500V

Abstract: FDP20N50 "Power Diode" 500V 20A FDPF20N50
Contextual Info: TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.