MOSFET 500V 18A Search Results

FDPF18N50T

Contextual Info: UniFETTM FDP18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

fdp18n50

Abstract: FDPF18N50
Contextual Info: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDP18N50

Abstract: FDPF18N50T FDPF18N50
Contextual Info: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

18N50T

Abstract: fdpf18n50t
Contextual Info: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF18N50T

Abstract: FDP18N50
Contextual Info: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

fdp18n50

Abstract: FDPF18N50 MOSFET 500V 18A
Contextual Info: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF

Abstract: FDP18N50 FDPF18N50 MOSFET 500V 18A
Contextual Info: TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Mosfet

Abstract: SSF18N50F
Contextual Info: SSF18N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.22ohm(typ.) ID 18A TO- 220F Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and

ISD18A

Abstract: MOSFET 500V 18A 18n50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

FQA18N50AV2,18N50,AV218N50,FDA18N50

Abstract: 18N50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1   TO-230 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 500V / 18A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY18N50W 500V, RDS(ON)=0.32W@VGS=10V, ID=9A

Contextual Info: KSM18N50V2/KSMF18N50V2 500V N-Channel MOSFET TO-220F TO-220 Features • • • • • • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability

18N50

Abstract: 18n50 mosfet 477 diode 18N50G-TF1-T 18N50G-TF2-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche

18N50

Abstract: 18N50L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche

18n50

Abstract: 18N50G 18n50 mosfet 477 diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche

FQA18N50AV2,18N50,AV218N50,FDA18N50,FQA18N50V2

Abstract: MDP18N50,18N50 FQA18N50AV2,18N50,AV218N50,FDA18N50 18N50+equivalent 18n50 mosfet 18n50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 1  DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the

S18A

Contextual Info: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available

TRANSISTOR PEC 545

Abstract: 2N7221 transistor 2Fn 1256C 2N7218 2N7219 2N7222
Contextual Info: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Ceramic Feedthroughs Available

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

9528

Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

luo24

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 O UTLINE DRAWING Dimensions in mm 4.5 r~ ! ! •i 1.5 j . 500V • TDS ON (MAX) .0.50Q.

400V to 12V DC Regulator

Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
Contextual Info: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET