MOSFET DPAK Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

FDD6676S

Abstract: FDS6676S
Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDD6644

Abstract: FDD6644S
Contextual Info: FDD6644S 30V N-Channel PowerTrench MOSFET General Description Features The FDD6644S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDD8N50NZ

Abstract: FDD8N50 FDD8N50NZTM
Contextual Info: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

60V 60A TO-252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD3055 Preliminary Power MOSFET POWER MOSFET 12 AMPS, 60 VOLTS N–CHANNEL DPAK „ DESCRIPTION The UTC UTD3055 is an N-channel Power MOSFET, and it can withstand high energy in the avalanche and commutation modes. The UTC UTD3055 is needed for applications, such as power

fdd7n25

Abstract: fdd7n25lz
Contextual Info: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD6N25 N-Channel UniFETTM MOSFET 200 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

Mosfet application note fairchild

Contextual Info: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5  Features Description • RDS on = 1.38  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

FDD4N60NZ

Contextual Info: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5  Features Description • RDS on = 1.9  (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

dpak mosfet

Abstract: FDD3N50NZ
Contextual Info: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

Contextual Info: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Ω Features Description • RDS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

Contextual Info: FDD5N50 N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Ω Features Description • RDS on = 2.1 Ω (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

Contextual Info: FDD3N40 / FDU3N40 N-Channel UniFETTM MOSFET 400 V, 2 A, 3.4 Ω Features Description • RDS on = 3.4 Ω (Typ.) @ VGS = 10 V, ID = 1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDD8N50NZTM

Contextual Info: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 mΩ Features Description • RDS on = 770 mΩ (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

Contextual Info: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features Description • RDS on = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 mΩ Features Description • RDS on = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description • RDS on = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDD6N25TM

Contextual Info: FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1  Features Description • RDS on = 1.1  (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features Description • RDS on = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to