MOSFET IR 250P Search Results

Contextual Info: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET

Contextual Info: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching

SX-1 10MHZ

Contextual Info: International PD-9.1613A IGR Rectifier_ preliminary_ IR F 7413A HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching

F7422D

Contextual Info: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V

F7406

Contextual Info: PD - 9.1247C International IG R Rectifier IR F7406 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching V dss = -30V

5M MARKING CODE SCHOTTKY DIODE

Abstract: smd diode schottky code marking 2F fld pcb diode schottky 117c
Contextual Info: International IOR Rectifier pd-9.mhe IR F 74 21D 1 preliminary FETKY MOSFET andf Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint • • • VDSS = 30V

Contextual Info: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint

smd code 9fc

Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Contextual Info: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti­ fier utilize advanced processing techniques to

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

2D 1002 diode

Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Contextual Info: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1257C International l R Rectifier IR L M L 2 4 0 2 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching

Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6 7 0 2 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channei MOSFET . * «1 : n V q ss J f , * *| O'— JJ — G ~ iJ L-f~ s = -20V ^ D S (o n ) =

Contextual Info: T PD 9.1508A International IG R Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET Voss = 30V R o S (o n ) = 0 . 1 0 Q Description Fifth Generation H E X F E T s from international Rectifier

IRF7343 N

Abstract: RF710 IRF7343
Contextual Info: I , In terna tional I PD- 9.1709 IQR Rectifier IR F 7 3 4 3 p r e l im i n a r y HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

L3103L

Contextual Info: PD - 9.1617B International I R Rectifier IR F 33 15S /L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF3315S • Low-profile through-hole (IRF3315L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: PD - 9.1333B International IQR Rectifier IR LR /U 3103 PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Ultra Low On-Resistance • Surface Mount IRLR3103 • Straight Lead (IRLU3103) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

Contextual Info: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V

TS 4142

Abstract: IRf 334
Contextual Info: Advanced Power MOSFET IR L R / U 034A FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA Max. @ VDS= 60V

N mosfet 250v 600A

Contextual Info: PD - 9.1658A International IO R Rectifier IR F R /U 9214 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -250V R d s (o ii )

Contextual Info: Advanced Power MOSFET IR F 8 3 0 A FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Sato Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■

diode sy 171 10

Abstract: D 304 x IRF1010 IRFBC40LC "DIODE" SY 171 1 g diode sy 171 SD 336 Ultra High Voltage Hexfets
Contextual Info: PD-9.1070 International Iiqr IRectifier IR FB C 4 0 LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

595-PH

Abstract: 30V 595PH
Contextual Info: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive

FR9214

Contextual Info: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A

Contextual Info: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive