MOSFET J 114 Search Results

2N6756 JAN

Abstract: 2N6755
Contextual Info: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

Contextual Info: j Ordering number : ENN7005~] P-Channel Silicon MOSFET FTS1018 ISAf/YOl Load Switching Applications Features Package Dimensions • Low O N -resistance. • 4V drive. • M ounting height 1,1mm. unit : mm 2147A [FTS1018] 0.65 3.0 . 0.425 _ £ J Drain Source

IXFN170N10

Abstract: 170N10 125OC IXFK170N10
Contextual Info: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C

K1397

Abstract: Shindengen Electric Mfg LTD141 2SK1397 F40W25
Contextual Info: L V X v U - X M ° 7 - M 0 S F E T LVX Series Power MOSFET OUTLINE DIMENSIONS 2SK 1397 Case MTO-3P [F40W25] 5.0 ± 250V 40A • M l < 3.3 a a •A * * [Unit ! mm] a -j l - E # « » Date code Ciss) 1f[C tîD ;W 7 7 .B A *§ M Î)'!/J ^ tV a & E IA J No.

44N60

Abstract: 125OC
Contextual Info: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW

Contextual Info: PD-9.1000 International j»g Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer

AP9563GH

Abstract: P-Channel mosfet 40V ap9563gh AP9563GJ a12t
Contextual Info: AP9563GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -40V RDS ON 40mΩ ID G ▼ RoHS Compliant BVDSS -26A S Description

Contextual Info: AP9563GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -40V RDS ON Simple Drive Requirement Fast Switching Characteristic 40m ID G -26A S Description G Advanced Power MOSFETs from APEC provide the

Contextual Info: AP9563GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -40V RDS ON Simple Drive Requirement Fast Switching Characteristic 40m ID G -26A RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the

AP9563GH

Abstract: AP9563GJ a12t
Contextual Info: AP9563GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -40V RDS ON 40mΩ ID G -26A S Description Advanced Power MOSFETs from APEC provide the

TO 505

Contextual Info: I ^ S S S k ll PRELIMINARY àSPII SFF50N20M SFF50N20Z SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 J in 50 AMP"— 200 VOLTS 0.055 Q N-CHANNEL POWER MOSFET D esigner’s Data Sheet

27n80q

Contextual Info: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C

Contextual Info: IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 Single M O S FE T D ie Symbol Test Conditions v T j DSS 100 100 V V Continuous Transient i20 i30 V V T0 = 25° C MOSFET chip capability External lead (current limit) Tc =25°C, Notel

2sk2673

Contextual Info: H V X -n v 'J -X /t^-MOSFET H V X -n SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case : IT 0 -3 P 2SK2673 F P 5 W 9 0 H V X 2 5.5 ' 0-3 900v 5a 0.7 • «2 [Unit ’ mm] I R A TIN G S il A b s o lu te Maxim um R a tin g s 3J CJ pL ^ H Item (Tc=25°C )

Contextual Info: IRFS254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

Contextual Info: IRFP254A A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

Contextual Info: IRFW710S A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFP254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

Contextual Info: IRFS254A A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

IXFN40N50

Contextual Info: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25