MOSFET NA IDSS Search Results

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539

Contextual Info: SFS9640 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS= -200V

Contextual Info: IRFW/I720A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ VOS= 400V

Contextual Info: SSP4N90A Advanced Power MOSFET FEATURES B ^D S S Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V

power mosfet 200A

Contextual Info: SSF17N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA M ax. @ VOS= 600V ■

Contextual Info: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V

Contextual Info: SFP9630 A d va n ce d Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : -10 nA Max. @ ■

Contextual Info: IRFR/U310A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B ^ dss - 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ V,*, = 400V

4405 n channel mosfet

Abstract: PUB4702
Contextual Info: Power Transistor Arrays MOSFETs PUB4702 Silicon n-channel power MOSFET For switching Unit: mm • Features M Di ain sc te on na tin nc ue e/ d • Avalanche energy capacity guaranteed • High-speed switching • Low ON resistance • No secondary surrender

RU3S

Abstract: SSS1N60A
Contextual Info: SSS1N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 0.7 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 600V

S45A

Contextual Info: IRFS510A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175t Operating Temperature Lower Leakage Current : 10 nA M ax @ VDS= 100V

Contextual Info: SSP4N80AS Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 800V

1RFS840

Abstract: 1RFS840A
Contextual Info: 1RFS840A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower Ro^c*, : 0.638 £2 (Typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET M Di ain sc te on na tin nc ue e/ d Secondary battery packs (Li ion battery, etc.) For switching circuits • Package ■ Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601G Silicon N-channel MOSFET For switching circuits • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Gate 2: Drain 3: Source M Di ain sc te on na

pj 49 diode

Contextual Info: IRLW/I530A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ B V dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* «Operating Temperature Lower Leakage Current : 10 nA Max. @ VDS=100V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3064G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuit For rechargeable buttery pack (Li+ ion buttery, etc.) • Package ■ Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na

2SK621

Abstract: XN1872 XN01872
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na

2SK621

Abstract: XN01872 XN1872 FET23
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3064G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuit For rechargeable buttery pack (Li+ ion buttery, etc.) ue pl d in an c

2SK3546G

Abstract: 2sk3546
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3