MSB035 Search Results

BFG67

Contextual Info: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

TRANSISTOR WM 9

Abstract: BF749 UHF transistor GHz transistor wm
Contextual Info: Philjps_Semicondtgtore B l 711065b QObflbSfl 55^ HIN ^^Produc^pecification NPN 5 GHz wideband transistor FEA TU R ES BF749 e P IN N IN G PIN • High power gain • Low noise figure • Gold m etallization ensures excellent reliability. D E S C R IP T IO N

Transistor S 40443

Abstract: C 5478 transistor msc 0645 MSC 1691 AI MSC 1691 Philips FA 291 msc 1699 msc 1697 MCD156 0280 130 085
Contextual Info: ^53^31 Philips Semiconductors IAPX 0024=137 Û00 NPN 7 GHz wideband transistor ^ BFG197; BFG197/X; BFG197/XR N AMER P H I L I P S / D I S C R E T E FEATURES • Product specification b?E D PINNING High power gain PIN • Low noise figure • Gold metallization ensures

Contextual Info: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BF1202WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

NPN N43

Abstract: NPN N37 BFG540 transistor N43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor

BF 212 transistor

Abstract: BFG67W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR

transistor marking NEP ghz

Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES

MCD088

Abstract: MCD101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG93A; BFG93A/X; BFG93A/XR NPN 6 GHz wideband transistors Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 25 Philips Semiconductors Product specification BFG93A; BFG93A/X;

BF1212R datasheet

Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer

BFQ195

Abstract: BFG197 MCD158 MCD156
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;

marking CODE MH

Abstract: PHILIPS dual gate mosfets transistor 1G1
Contextual Info: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR

transistor marking NEP ghz

Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

BFG520

Contextual Info: BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BF1101WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING

Contextual Info: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

DUAL-GATE

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

BFG520W

Abstract: scd33 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors July 1994 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR

BF1109

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING

BF1201WR

Abstract: BF1201 BF1201R Bp SOT343R dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs

BF1109

Abstract: BF1109R BF1109WR dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

CIC 9102

Abstract: "RF Switches" Philips MARKING CODE BF1108 BF1108R MBL027 DIODE marking S4 69
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R FEATURES • Specially designed for low loss RF switching