MSM5116160 Search Results

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

Contextual Info: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

SOJ42-P-400-1

Abstract: MSM5116160F
Contextual Info: FEDD5116160F-02 1Semiconductor MSM5116160F This version: August. 2002 Previous version : Sep.2001 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor MSM5116160B_ E2G 0049-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116160B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116160 B_ E 2 G 0 0 4 9 -17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The M SM5116160B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116 16 0 B_ E2G 0049-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116160B achieves high integration, high-speed operation, and low-power

Contextual Info: OKI Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IP T IO N The MSM5116160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM5116160 is OKI's CMOS silicon gate process technology.

Contextual Info: J2G0049-17-41 作成：1998年 1月 MSM5116160B l 前回作成：1997年 5月 ¡ 電子デバイス MSM5116160B 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116160BはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックランダム

Contextual Info: O K I Semiconductor MSM5116160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

M5M23160

Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Contextual Info: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1

Contextual Info: O K I Semiconductor MSM5 1 16160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

SOJ42-P-400-1

Abstract: msm5116160b
Contextual Info: E2G0049-17-41 ¡ Semiconductor MSM5116160B ¡ Semiconductor This version: Jan. 1998 MSM5116160B Previous version: May 1997 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160B is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

MSM5116160D

Abstract: MSM5116160DSL SOJ42-P-400-1
Contextual Info: E2G0153-29-41 ¡ Semiconductor MSM5116160D/DSL ¡ Semiconductor This MSM5116160D/DSL version: Apr. 1999 Previous version: Oct. 1998 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate

Contextual Info: O K I Semiconductor MSM5116160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low-power

SOJ42

Contextual Info: J2G0153-29-41 作成：1999年 4月 MSM5116160D/DSL l 前回作成：1998年 4月 ¡ 電子デバイス MSM5116160D/DSL 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116160D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラン

MSM5116160

Abstract: ENC-T2
Contextual Info: O K I Semiconductor MSM5116160_ 1,046,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 16160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-w ord x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low-power

SOJ42

Abstract: icc3
Contextual Info: J2G0153-29-41 作成：1999年 4月 MSM5116160D/DSL l 前回作成：1998年 4月 ¡ 電子デバイス MSM5116160D/DSL 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116160D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラン

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

SOJ42-P-400-1

Abstract: msm5116160b
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

SOJ42

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株