TMS44C256
Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore
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16Kbit
64Kbit
256Kbit
600mil)
300mil)
TMS44C256
HY6116 CROSS REFERENCE
sram mcm6264
ZMD cross reference
SIMTEK cross reference
HM50464
soj28 sop28
HM65664A
HM6116
oki cross
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G EN E R A L DESCRIPTION T h e M S M 5 1 C 2 5 6 A is a new generation dynam ic R A M org an ized a s 262,144-w ord x 1-bit. T h e technology u sed to fabricate the M S M 5 1 C 2 5 6 A is O K I’s C O M S silicon gate p ro c e ss tech
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MSM51C256A
144-Word
144-w
51C256A-7lid
MSM51C256A
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18-PIN
Abstract: MSM51C256A 1772B
Text: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.
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MSM51C256A
144-Word
MSM51C256A
b724240
24g40
D01773E
18-PIN
1772B
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G ENERAL DESCRIPTION The M S M 51C 256A is a new generation dynam ic RAM organized as 262,144-w ord x 1-bit. The technology used to fabricate the M SM 51C 256A is O K I’s C O M S silicon gate process te ch
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MSM51C256A
144-Word
144-w
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynam ic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology. The device operates at a single 5V pow er supply. Its I /O pins are TTL compatible.
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MSM51C256A
144-Word
MSM51C256A
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MSM51C256A
Abstract: msm51c256
Text: O K I Semiconductor MSM51C256A 262,144-Word x 1 - B it DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organizedas262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI'sCOMSsilicongate process technology. The device operates at a single 5V power supply. Its I/O pins are TTL compatible.
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MSM51C256A
144-Word
MSM51C256A
msm51c256
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb
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MSC2320B-XXYS9/DS9
144-Word
36-Bit
MSC2320B-xxYS9/DS9
MSM514256B)
256Kb
MSM51C256A)
72pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/D S18 is a fully decoded 524,288-w ord x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 1-Mb DRAMs in SOJ MSM514256B packages and eight
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MSC2321
8/DS18
288-Word
36-Bit
SC2321B-xxYS18/D
288-w
MSM514256B)
256-Kb
MSM51C256A)
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G1238
Abstract: sc2331
Text: O K I Semiconductor MSC2331B-XXYS3/KS3 262,144-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2331B-xxYS3/KS3 is a fully decoded 262,144-w ord x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 1-Mb DRAMs in SOJ MSM514256B packages and one 256-Kb
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MSC2331B-XXYS3/KS3
144-Word
SC2331B-xxYS3/KS3
144-w
MSM514256B)
256-Kb
MSM51C256A)
30-pin
SC2331B-xxYS3:
SC2331B-xxKS3:
G1238
sc2331
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