MSM51C256 Search Results

T462 transistor

Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
Contextual Info: 4bE D rtTTT - • b 7 2 4 2 4 D O D D ' m û ô ITS H O K I J I O K I S E M I C O N D U C T O R GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 262,144 W O R D X1-BIT S D Y N A M IC R A M GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.

FZJ 131

Abstract: MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS dynamic ram binary cell
Contextual Info: O K I semiconductor MSM51C256RS/JS • 7= - a .* - A S " * 262, 144 W ORD X 1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G EN E R A L DESCRIPTION T h e M S M 5 1 C 2 5 6 A is a new generation dynam ic R A M org an ized a s 262,144-w ord x 1-bit. T h e technology u sed to fabricate the M S M 5 1 C 2 5 6 A is O K I’s C O M S silicon gate p ro c e ss tech ­

FZJ 131

Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
Contextual Info: K I SEflICONDUCTOR GROUP IDE D g fc,754240 ÖD04143 b | O K I semiconductor MSM51C256RS/JS * 262,144 W O RD X1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

18-PIN

Abstract: MSM51C256A 1772B
Contextual Info: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.

Contextual Info: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G ENERAL DESCRIPTION The M S M 51C 256A is a new generation dynam ic RAM organized as 262,144-w ord x 1-bit. The technology used to fabricate the M SM 51C 256A is O K I’s C O M S silicon gate process te ch ­

Contextual Info: O K I Semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynam ic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology. The device operates at a single 5V pow er supply. Its I /O pins are TTL compatible.

EZ613

Abstract: MSM51C256-10 MSM51C256 MSM51C256RS
Contextual Info: y - y . . O K I SEMICONDUCTOR GROUP O K I semiconductor_ T -V * MSM51C256 2 6 2 ,1 4 4 W ORD X1-BITS D YN A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

MSM51C256A

Abstract: msm51c256
Contextual Info: O K I Semiconductor MSM51C256A 262,144-Word x 1 - B it DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organizedas262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI'sCOMSsilicongate process technology. The device operates at a single 5V power supply. Its I/O pins are TTL compatible.

Contextual Info: 4bE D rtTTT - • b72424D ODD'mûô I T S H O K I J I O K I SEMICONDUCTOR GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 2 6 2 ,1 4 4 W O RD X1-BITS D Y N A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.

Contextual Info: O K I semiconductor MSM51C256_ 262,144 WORD X1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb

Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/D S18 is a fully decoded 524,288-w ord x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 1-Mb DRAMs in SOJ MSM514256B packages and eight

MSC2331A-80YS3

Abstract: MSC2331A-XX BS55 EPOXY
Contextual Info: 4bE D OKI s o m l c o n c • k b?24240 j c t o □DDc bb4 5 1 3 H O K I J r MSC2331A-XX YS3/KS3 r- 262, 144 BY 9 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION O K I SEMICONDUCTOR GROUP The Oki MSC2331A-XX YS3/KS3 is a fully decoded, 262,144 words X 9 bit CMOS dynamic random

Contextual Info: OKI semiconductor MSC2320A-xxYS9 262,144 Word BY 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2320A-xxYS9 is a futly decoded, 262,144 word x 36 bit CMOS dynamic random access memory composed of eight 1Mb DRAMs in SOJ MSM514256AJS and four 256 Kb DRAMs in PLCC

G1238

Abstract: sc2331
Contextual Info: O K I Semiconductor MSC2331B-XXYS3/KS3 262,144-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2331B-xxYS3/KS3 is a fully decoded 262,144-w ord x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 1-Mb DRAMs in SOJ MSM514256B packages and one 256-Kb

GG1Q

Abstract: N625 4410m p4be
Contextual Info: 4bE D • b ? 2 l4240 D 0 1 D 3 4 3 0 2 e] « O K I J O K I semiconductor_ MSC2320A-XXYS9 O K I S E M I C O N D U C T O R GR OU P 262,144 Word BY 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2320A-xxYS9 is a fully decoded, 262,144 word x 36 bit CMOS dynamic random access

MSM6389B

Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Contextual Info: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU

MSC2321A-80YS18

Abstract: MSC2331A-10YS18 001035
Contextual Info: OKI 4bE D • b75424D 0010352 Ô31 * O K I J sem ico n d u cto r_ MSC2321A-XXYS18 O K I S E H I C 0 N D U C T 0 R GROUP 524,288 Word BY 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2321A-xxYS18 is a fully decoded, 524,288 word x 32 bit CMOS dynamic random access

4410m

Abstract: MSC2320A-10YS9 MSC2320A-80YS9
Contextual Info: 4bE D • b ? 2 l4240 D 0 1 D 3 4 3 0 2 e] « O K I J O K I semiconductor_ MSC2320A-XXYS9 O K I S E M I C O N D U C T O R GR OU P 262,144 Word BY 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2320A-xxYS9 is a fully decoded, 262,144 word x 36 bit CMOS dynamic random access