MT3S19 Search Results

Contextual Info: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1.

Contextual Info: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 T6 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e| =13 dB typ. (@ f = 1 GHz) 0.166±0.05 Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)

MT3S19TU

Contextual Info: MT3S19TU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19TU ○ VHF～UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 3 1 UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準 2 絶対最大定格 (Ta = 25°C)

Contextual Info: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 • Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) 0.42 -0.05 +0.08 0.17 -0.07

MT3S19R

Contextual Info: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz)

MT3S19R

Contextual Info: MT3S19R 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19R 単位: mm ○ VHF~UHF 帯 低雑音・低歪み増幅用 +0.08 0.05 M A 0.42 -0.05 +0.08 0.17 -0.07 雑音特性が優れています。: NF = 1.5 dB 標準 (@f = 1 GHz)

MT3S19

Contextual Info: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1.

MT3S19

Contextual Info: MT3S19 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19 ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.5 dB 標準 (@ f=1 GHz) • 高利得です。:|S21e|2=12.5 dB (標準) (@ f=1 GHz)

Contextual Info: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.BASE 2.EMITTER 3.COLLECTOR T6 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e|2=13 dB typ. (@ f = 1 GHz)

Contextual Info: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12.5 dB (typ.) (@ f=1 GHz) 2 Marking 3 T 1.

Contextual Info: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure: NF=1.5dB typ. (@ f=1GHz) • High Gain: |S21e| =13dB (typ.) (@ f=1GHz)

MT3S19TU

Contextual Info: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 T6 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e|2=13 dB typ. (@ f = 1 GHz) 0.166±0.05 Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

3sk catalog

Abstract: TE85L Toshiba
Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters