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    MT4C4256DJ-7

    Abstract: MT4C4256
    Text: MICRON I MT4C4256 L 256K SeWCOWUCTOFl INC X 4 DRAM 256K X 4 DRAM DRAM FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256L) • Industry-standard x4 pinout, timing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply


    OCR Scan     		PDF MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA CYCLE24 MT4C4256DJ-7

    Untitled

    Abstract: No abstract text available
    Text: MT4C4256 L 256K X 4 DRAM [M IC R O N 256K DRAM X 4 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA 20-Pin

    MT4C4256DJ-7

    Abstract: BBU RRH
    Text: MT4C4256 L 256K X 4 DRAM I^ IIC Z R O N DRAM 256K x 4 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200fiA 20-PIn MT4C4256DJ-7 BBU RRH

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		PDF GG07b0S MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA

    Untitled

    Abstract: No abstract text available
    Text: MT4C4256 L 256K X 4 DRAM I^IICRON DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, .3mW standby; 150mW active, typical


    OCR Scan     		PDF MT4C4256 150mW 512-cycle 20-Pin MT4C4256L

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D m DQ0M2SÖ ^Qâ • MRN MT4C4256 L 256K X 4 DRAM fVIICIRON ORAM 256K X 4 DRAM LOW POWER, EXTENDED REFRESH o 30 > FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process


    OCR Scan     		PDF MT4C4256 150mW 512-cycle 200jiA 20-Pin MT4C4256L