MT5C6408 Search Results

smd marking A8

Contextual Info: SRAM MT5C6408 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

5962-3829452MZA

Contextual Info: SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

micron sram

Abstract: taa 723 MT5C6408 MT5C6408DJ-15
Contextual Info: OBSOLETE 8/31/94 MT5C6408 8K x 8 SRAM SRAM 8K x 8 SRAM FEATURES • High speed: 9, 10, 12, 15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with ?C?E1, CE2 and ?O/E options

MT5C6408

Contextual Info: I^ IIC R O N 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE1, CE2 and OE

chn 442

Abstract: chn 437 chn 439 chn 436 lz smd marking
Contextual Info: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)

Contextual Info: I^ICRQN 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 20 an d 25n s • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly _

5C6408

Abstract: 1293-D
Contextual Info: OBSOLETE 8/31/94 MICRON I MT5C6408 8K x 8 SRAM SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply

Contextual Info: AUSTIN SEMICONDUCTOR-GPL CRO SS REFERENCE continued ASI JAN PART NUMBER SPEED (ns) MT5C1009 120 100 85 70 55 45 35 25 MT5C6408 MT5C6408L (LVDR) PACKAGE TYPE (1) PART NUMBER C cw EC 8959822 8959823 8959824 8959825 8959826 8959827 8959828 8959829 BZC/BZA BZC/BZA

MT5C6408

Contextual Info: SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

CI 321

Abstract: 100 20L A1 diode SMD a7 Transistor smd diode a6 smd transistor A8 4216 d-1 smd transistor marking A3 MT5C6408 smd marking 8K SMD marking A6
Contextual Info: SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) 4 3 2 1 28 27 26 • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention

t19l

Abstract: mt5C6408
Contextual Info: [M IC R O N MT5C6408 SRAM 8K X 8 SRAM • High speed: 8 ,1 0 ,1 2 , 15, 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE options • All inputs and outputs are TTL com patible

5962-3829452MZA

Contextual Info: SRAM MT5C6408 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

Contextual Info: SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) 4 3 2 1 28 27 26 • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention

MT5C6408

Contextual Info: AUSTIN S E M I C O N D U C T O R INC bOE ]> • T Ü U E 1 1 ? Ü D D D 3 0 2 ASM H A U S T MT5C6408 DIE 8K X 8 SRAM MICRON T - 4 b - 2 .S - ß _ MILITARY SRAM DIE 8K X 8 SRAM FEATURES • High speed: 1 2 ,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal

Contextual Info: MICRON TECHNOLOGY INC SSE ]> • b l l l S M T GQQSb4S Ö7Ü « f l R N MT5C6408 883C 8K X 8 SRAM I^ IC R Ü N . *—T"- Li i_-7 1 _1 " MILITARY SRAM 8K X 8 SRAM • • • • PIN ASSIGNMENT Top View) SMD 5962-38294, Class M JAN 5962-38294, Class B

Contextual Info: MICRON SEMICONDUCTOR INC L7E » • 000^340 IOS ■ MT5C6408 8K X 8 SRAM l^ iic n o N SRAM 8K X 8 SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE

Contextual Info: •M'SriiN Sí M l ! N | ) l ' ( i'OR l \< MT5C6408 883C 8K X 8 SRAM 8K X 8 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View) • SM D 5962-38294 • M IL-STD-883 FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention

Contextual Info: A S l AUSTIN SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View) • SMD 5962-38294 • MIL-STD-883 High speed: 12,15, 20, 25 and 35ns Battery backup: 2V data retention High-performance, low-power, CMOS double-metal

ed18810

Abstract: 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added chanaes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frve F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

HM1E

Abstract: 5962-3829435 IDT7164L70L32B mk48h64 5962-3829407MXX 62l64-45 HC6364 5962-8552505X QML-38535 IDT7164S55DB
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added changes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frye F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

Contextual Info: niCRON TECHNOLOGY INC 5SE D blllSMT 0 0 0 3 4 l4fl “133 I^ IC R O N 8K urn M T5C 6408 X 8 S R AM •4 > -Z V I2 _ SRAM 8K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply