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    Motorola Semiconductor Products MTD1N40E

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    MTD1N40 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTD1N40 Motorola TMOS power FET . 400 V, 1 A. Scan PDF
    MTD1N40 Motorola Switchmode Datasheet Scan PDF
    MTD1N40 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTD1N40 Unknown FET Data Book Scan PDF
    MTD1N40 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD1N40-1 Motorola TMOS power FET . 400 V, 1 A. Scan PDF
    MTD1N40-1 Unknown FET Data Book Scan PDF
    MTD1N40-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    MTD1N40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    sgsp531

    Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92


    Original     		PDF VN0640N2 TX106 IRF712 VN0340N2 MTD1N40 MTD1N40-1 RFP1N40 IRFF312 IRFF312 sgsp531 2sk76 irf33 unitrode VN0340N5 sfn02806 stm231 stm331 650P

    Untitled

    Abstract: No abstract text available
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E r14525 MTD2N40E/D

    MTD2N40E

    Abstract: AN569 SMD310
    Text: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTD2N40E/D MTD2N40E MTD2N40E/D* MTD2N40E AN569 SMD310

    2N40E

    Abstract: 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E r14525 MTD2N40E/D 2N40E 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310

    2N40E

    Abstract: t2n40e
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E MTD2N40E/D 2N40E t2n40e

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    TB20N20E

    Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
    Text: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01


    OCR Scan     		PDF 314B-02 O-220) 418B-01 MTB8N50E TB10N40E TB20N20E TB33N10E TB15N06E TB30N06EL MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M

    369A-10

    Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
    Text: MOTOROLA SC XSTRS/R F bf l E » • b3L72S4 00=10403 102 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface M ount or Insertion M ount TM O S POWER FET


    OCR Scan     		PDF MTD1N40 369A-10 AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MBRD2060CT

    Abstract: MBRD20100CT MTD2955 sot-223 MLL34 mbrd20100
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b?2SM ODTbSSB 0 ■ M 0 Tb 7'''33V7 DPAK DEVICES (continued) TMOS Power MOSFETs Device » rPS(on¡ @ te Ohms Max Amp» *D(cont! Amps 4 6 6 5 0.4 1.5 1.5 0.7 0.3 0.25 0.5 0.6 0.6 0.12 0.6 0.15 0.18 0.3 0.1 0.6 0.4 1 0.5 0.5


    OCR Scan     		PDF MTD2N50 MTD1N50 MTD1N45 MTD1N40 MTD7N20 MTD2N20 MTD3P20* MTD4N20 MTD6N15 MTD6N10 MBRD2060CT MBRD20100CT MTD2955 sot-223 MLL34 mbrd20100

    P250T

    Abstract: ious
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S DPAK fo r Surface M o u n t or Insertion M ount T M O S P O W E R FET 1 AM PERE rD S o n = 5 O H M S 400 VOLTS


    OCR Scan     		PDF MTD1N40 P250T ious

    MTA2N60E

    Abstract: MRF177M MTA2955 MTA4N60E MTA30N06E IN402 MTA4N50E CASE221D-02 MTA8N10E MTA15N06
    Text: - 278 - f 1M € % % ±£ ft Vd s or Vd g V Vg s loss Ig s s m (A) th) Vg s (nA) Vg s (V) Vd s (V) ( M A) Ve s = Vg s (Ta=25‘ C) 14 Io(on) Ciss g fs Coss Crss Vg s =0 (*typ) (*typ) (max) (max) (pF) (pF) (max) Id (nA) (V) (V) ft R Ds(on) max min * /CH * /CH


    OCR Scan     		PDF MRF173CQ CASE316-01 MRF175GV/GU CASE375-01 CASE333-03 MRF17 CASE77-04 MTA8N10E MTA15N06 O-220 MTA2N60E MRF177M MTA2955 MTA4N60E MTA30N06E IN402 MTA4N50E CASE221D-02

    fet dpak

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TD2N40E TMOS E-FET High Energy Power FET DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N-Channel Enhancement-Mode Silicon Gate This advan ced high voltage T M O S E -F E T is designed to


    OCR Scan     		PDF