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    MTP15 Price and Stock

    Siemens MTP1500UCPSK

    MTP1500 UNIFIED COMFORT PANEL ST
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    DigiKey MTP1500UCPSK Box 1
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    Samtec Inc FMTP-15-D-18.00-01

    .050" TIGER EYE IDC TWISTED PAIR
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    Samtec Inc FMTP-15-D-08.77-01

    .050" TIGER EYE IDC TWISTED PAIR
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    Samtec Inc FMTP-15-D-03.85-01

    .050" TIGER EYE IDC TWISTED PAIR
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    Samtec Inc FMTP-15-D-08.77-01-F

    .050" TIGER EYE IDC TWISTED PAIR
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    MTP15 Datasheets (63)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP156K00691D Vishay Siliconix Wet Tantalum Capacitors Subminiature, Axial Leads Original PDF
    MTP156M00691D Vishay Siliconix Wet Tantalum Capacitors Subminiature, Axial Leads Original PDF
    MTP15N05 Motorola European Master Selection Guide 1986 Scan PDF
    MTP15N05 Motorola Switchmode Datasheet Scan PDF
    MTP15N05 Unknown FET Data Book Scan PDF
    MTP15N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP15N05A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP15N05E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP15N05E Motorola N-channel TMOS power FET. 50 V, 15 A, Rds(on) 0.1 Ohm. Scan PDF
    MTP15N05E Motorola Switchmode Datasheet Scan PDF
    MTP15N05E Unknown FET Data Book Scan PDF
    MTP15N05E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP15N05EL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP15N05EL Motorola N-channel TMOS power FET logic level. 50 V, 15 A, Rds(on) 0.1 Ohm. Scan PDF
    MTP15N05EL Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP15N05L Unknown FET Data Book Scan PDF
    MTP15N05L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP15N05L STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MTP15N05LFI STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MTP15N06 Motorola Switchmode Datasheet Scan PDF

    MTP15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTP15N06VL

    Abstract: AN569
    Text: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP15N06VL r14525 MTP15N06VL/D MTP15N06VL AN569

    Untitled

    Abstract: No abstract text available
    Text: MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP15N06V O-220 MTP15N06V/D

    Untitled

    Abstract: No abstract text available
    Text: MTP15N06L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF MTP15N06L

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP15N05E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES RDS(on) - 0.1 OHM


    Original     		PDF MTP15N05E

    TMOS E-FET

    Abstract: AN569 MTP15N06VL
    Text: MOTOROLA Order this document by MTP15N06VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP15N06VL Designer's TMOS Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This


    Original     		PDF MTP15N06VL/D MTP15N06VL MTP15N06VL/D* TMOS E-FET AN569 MTP15N06VL

    Untitled

    Abstract: No abstract text available
    Text: MTP15N06 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-65


    Original     		PDF MTP15N06

    Untitled

    Abstract: No abstract text available
    Text: MTP15N05EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF MTP15N05EL

    mosfet transistor 400 volts.100 amperes

    Abstract: No abstract text available
    Text: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP15N06VL O-220 MTP15N06VL/D/D mosfet transistor 400 volts.100 amperes

    Untitled

    Abstract: No abstract text available
    Text: MTP15N15 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)


    Original     		PDF MTP15N15

    TMOS power FET

    Abstract: motorola an569 thermal AN569 MTP15N06V
    Text: MOTOROLA Order this document by MTP15N06V SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM


    Original     		PDF MTP15N06V MTP15N06V/D* MTP15N06V/D TMOS power FET motorola an569 thermal AN569 MTP15N06V

    Untitled

    Abstract: No abstract text available
    Text: MTP15N06E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF MTP15N06E

    Untitled

    Abstract: No abstract text available
    Text: MTP15N05L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF MTP15N05L

    MTP15N06V

    Abstract: AN569
    Text: MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP15N06V r14525 MTP15N06V/D MTP15N06V AN569

    MTP15N05

    Abstract: MTP15N06 TP15N05 P-15N 15N05 5N06 5N05
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M TP15N05 MTP15N06 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r lo w vo ltag e , high


    OCR Scan     		PDF TP15N05 MTP15N06 MTP15N05, -220A MTP15N05 MTP15N06 P-15N 15N05 5N06 5N05

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high


    OCR Scan     		PDF MTP15N05EL RuggedO-220AB) Y145M 221D-02 O-220 Y145M, 314B03 O-220)

    MTP15N05L

    Abstract: MTP15N06L MTP15N05LFI
    Text: r r MTP15N05L/FI MTP15N06L/FI j S C S -T H O M S O N ^ 7 #„ HllglS! ilLlÊÎ[SI©lfflO gi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIM INARY DATA TYPE MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI VDSS ^DS(on 50 50 60 60 0.15 Q


    OCR Scan     		PDF MTP15N05L/FI MTP15N06L/FI MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI O-220 ISOWATT220 500ms

    TT220

    Abstract: TP15N05L
    Text: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI


    OCR Scan     		PDF MTP15N05L/FI MTP15N06L/FI MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI TT220 500ms TT220 TP15N05L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F b&E D b3b7254 QO'iaTba b MT «flO Tb MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MTP15N08EL Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancem ent-Mode Silico n Gate T h is L o gic Level T M O S Pow er FET is d e sig n e d for high


    OCR Scan     		PDF b3b7254 MTP15N08EL 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, 314B03 O-220)

    mosfet transistor 800 volts.200 amperes

    Abstract: 221A-06 AN569 MTP15N15
    Text: LfiE D M O T O R O L A SC X S T R S / R F b 3 b ? 2 S 4 D Q clfi773 TOb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP15N15 P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-Mode Silicon Gate TMOS POWER FET 15 AMPERES *DS(on| = 0.26 OHM


    OCR Scan     		PDF b3b72S4 110Tb MTP15N15 mosfet transistor 800 volts.200 amperes 221A-06 AN569 MTP15N15

    MTP15N05E

    Abstract: 221A-06 AN569
    Text: M O T O R O L A SC X S T R S / R F bflE D • b 3 b ? 2 S 4 G G [ifl752 2ßl MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP15N05E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sis to r N-Channel Enhancem ent-Mode Silicon G ate


    OCR Scan     		PDF 110Tb MTP15N05E MTP15N05E 221A-06 AN569

    motorola application note an-1

    Abstract: MTP15N08EL 100DC 221A-06 AN569 LC3000
    Text: MOTOROLA SC XSTRS/R F b&E b3b7254 D QO'iaTba bMT «flOTb MOTOROLA m SEM ICONDUCTO R TECHNICAL DATA MTP15N08EL Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T r a n s is to r s N-Channel Enhancem ent-Mode Silico n Gate This Logic Level TMOS Power FET is designed fo r high


    OCR Scan     		PDF b3b7254 00Tfl7bfl AN569, motorola application note an-1 MTP15N08EL 100DC 221A-06 AN569 LC3000

    MTP15N05L

    Abstract: MTP15N05EL MTP15N06L 221A-06 AN569 MTP15
    Text: M O T O R O L A SC XST R S / R F böE » • b 3 b 7 2 5 4 DDTfiTS? fib3 ■ HOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet Motorola Preferred Device Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF 110Tb MTP15N05L MTP15N05EL MTP15N06L 221A-06 AN569 MTP15

    TP15N06V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP15N06V SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		PDF MTP15N06V TP15N06V 21A-06 TP15N06V

    5N06

    Abstract: No abstract text available
    Text: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L


    OCR Scan     		PDF TP15N05L TP15N05LFI TP15N06L TP15N06LFI 500ms 5N06