MTP15N05 Search Results

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP15N05E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES RDS(on) - 0.1 OHM

Contextual Info: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high

Contextual Info: MTP15N05EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

MTP15N05L

Abstract: MTP15N06L MTP15N05LFI
Contextual Info: r r MTP15N05L/FI MTP15N06L/FI j S C S -T H O M S O N ^ 7 #„ HllglS! ilLlÊÎ[SI©lfflO gi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIM INARY DATA TYPE MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI VDSS ^DS(on 50 50 60 60 0.15 Q

TT220

Abstract: TP15N05L
Contextual Info: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI

MTP15N05E

Abstract: 221A-06 AN569
Contextual Info: M O T O R O L A SC X S T R S / R F bflE D • b 3 b ? 2 S 4 G G [ifl752 2ßl MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP15N05E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sis to r N-Channel Enhancem ent-Mode Silicon G ate

MTP15N05L

Abstract: MTP15N05EL MTP15N06L 221A-06 AN569 MTP15
Contextual Info: M O T O R O L A SC XST R S / R F böE » • b 3 b 7 2 5 4 DDTfiTS? fib3 ■ HOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet Motorola Preferred Device Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MTP15N05L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

5N06

Contextual Info: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L

Contextual Info: MTP15N05E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)45 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)-55õ

Contextual Info: MTP15N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-65

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

MTP15N06E

Abstract: MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20N08 MTP20P06 MTP12N05 MTP12N05E MTP12N06
Contextual Info: - f §y £ fr tt € ? Wl ± £ Vd s or Vg s fê Ta=25‘ C Ig s s Pd Id * /CH Vd g W. Vd s (V) (V) (V) (W) (A) (nA) (V) ( M A) MTP12NQ5 MOT N 50 ± 2 0 12 75 MTP12N05E MOT N 50 12 40 MTP12N06 MOT N 60 ± 2 0 12 75 MTP12N08 MOT N 80 ± 2 0 12 75 M T P 12N08L

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

mgb20n40cl

Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

IN5223

Abstract: T1003 742p ERAB2-004
Contextual Info: y n y jx iy n D ual-O utput, S w itch -M o d e R eg u la to r + 5 V to ± 1 2 V o r± 1 5 V _ G eneral D escription The M A X 742 D C -D C c o n v e rte r is a c o n tro lle r for dual-outp u t pow er s u p p lie s in the 3W to 60W range. R elying on

Contextual Info: y i/ iy j x iy i/ i D ual-O utput, S w itch -M o d e R eg u lato r + 5 V to ± 1 2 V o r± 1 5 V _General Description _ Features The MAX742 DC-DC converter is a controller for dual-out­ put power supplies In the 3W to 60W range. Relying on

Contextual Info: 19-3105; Rev 2; 8/96 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO Sw it c h-M ode Re gula t or w it h +5 V t o ±1 2 V or ±1 5 V Dua l Out put The MAX742 DC-DC converter is a controller for dual-output power supplies in the 3W to 60W range. Relying on

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.