MTP15N Search Results

MTP15N06VL

Abstract: AN569
Contextual Info: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP15N05

Abstract: MTP15N06 TP15N05 P-15N 15N05 5N06 5N05
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M TP15N05 MTP15N06 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r lo w vo ltag e , high

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

Contextual Info: MTP15N06L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP15N05E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES RDS(on) - 0.1 OHM

Contextual Info: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high

TMOS E-FET

Abstract: AN569 MTP15N06VL
Contextual Info: MOTOROLA Order this document by MTP15N06VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP15N06VL Designer's TMOS Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

Contextual Info: MTP15N06 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-65

Contextual Info: MTP15N05EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

mosfet transistor 400 volts.100 amperes

Contextual Info: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP15N05L

Abstract: MTP15N06L MTP15N05LFI
Contextual Info: r r MTP15N05L/FI MTP15N06L/FI j S C S -T H O M S O N ^ 7 #„ HllglS! ilLlÊÎ[SI©lfflO gi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIM INARY DATA TYPE MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI VDSS ^DS(on 50 50 60 60 0.15 Q

TT220

Abstract: TP15N05L
Contextual Info: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI

Contextual Info: MOTOROLA SC XSTRS/R F b&E D b3b7254 QO'iaTba b MT «flO Tb MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MTP15N08EL Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancem ent-Mode Silico n Gate T h is L o gic Level T M O S Pow er FET is d e sig n e d for high

mosfet transistor 800 volts.200 amperes

Abstract: 221A-06 AN569 MTP15N15
Contextual Info: LfiE D M O T O R O L A SC X S T R S / R F b 3 b ? 2 S 4 D Q clfi773 TOb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP15N15 P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-Mode Silicon Gate TMOS POWER FET 15 AMPERES *DS(on| = 0.26 OHM

MTP15N05E

Abstract: 221A-06 AN569
Contextual Info: M O T O R O L A SC X S T R S / R F bflE D • b 3 b ? 2 S 4 G G [ifl752 2ßl MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP15N05E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sis to r N-Channel Enhancem ent-Mode Silicon G ate

motorola application note an-1

Abstract: MTP15N08EL 100DC 221A-06 AN569 LC3000
Contextual Info: MOTOROLA SC XSTRS/R F b&E b3b7254 D QO'iaTba bMT «flOTb MOTOROLA m SEM ICONDUCTO R TECHNICAL DATA MTP15N08EL Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T r a n s is to r s N-Channel Enhancem ent-Mode Silico n Gate This Logic Level TMOS Power FET is designed fo r high

MTP15N05L

Abstract: MTP15N05EL MTP15N06L 221A-06 AN569 MTP15
Contextual Info: M O T O R O L A SC XST R S / R F böE » • b 3 b 7 2 5 4 DDTfiTS? fib3 ■ HOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet Motorola Preferred Device Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

TMOS power FET

Abstract: motorola an569 thermal AN569 MTP15N06V
Contextual Info: MOTOROLA Order this document by MTP15N06V SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM

TP15N06V

Contextual Info: MOTOROLA Order this document by MTP15N06V SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

Contextual Info: MTP15N06E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: MTP15N05L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

MTP15N06V

Abstract: AN569
Contextual Info: MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

5N06

Contextual Info: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L