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    Motorola Semiconductor Products MTP8P10

    8 A, 100 V, 0.4 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB
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    Quest Components MTP8P10 100
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    Nalco Champion MTP8P10

    8 A, 100 V, 0.4 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB
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    MTP8P10 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP8P10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP8P10 Motorola European Master Selection Guide 1986 Scan PDF
    MTP8P10 Motorola POWER FIELD EFFECT TRANSISTOR Scan PDF
    MTP8P10 Motorola P-channel TMOS power FET. 100 V, 8 A, Rds(on) 0.4 Ohm. Scan PDF
    MTP8P10 Motorola Switchmode Datasheet Scan PDF
    MTP8P10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP8P10 Unknown FET Data Book Scan PDF
    MTP8P10 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    MTP8P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    *e13007

    Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    02D2G

    Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original     		PDF MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12

    221D

    Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art


    Original     		PDF MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105

    18004D2

    Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
    Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar


    Original     		PDF MJB18004D2T4 MJB18004D2T4 18004D2 r14525 MJB18004D2T4/D 18004D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package

    221D

    Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES


    Original     		PDF MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUL44

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductort BUL44 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies


    Original     		PDF BUL44 BUL44 r14525 BUL44/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MTP8P10

    Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


    Original     		PDF BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    221D

    Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF MJE18009/D MJE18009 MJF18009 MJE/MJF18009 E69369 MJE18009/D* 221D MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105

    221D

    Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES


    Original     		PDF MJE18008/D* MJE18008/D 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105

    mjf18004

    Abstract: No abstract text available
    Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art


    Original     		PDF MJE/MJF18004 MJE18004 MJF18004 AN1040. mjf18004

    3500-TSI

    Abstract: No abstract text available
    Text: ON Semiconductor BUL146 BUL146F SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146/BUL146F have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types


    Original     		PDF BUL146/BUL146F BUL146 BUL146F AN1040. 3500-TSI

    1N5761

    Abstract: No abstract text available
    Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS


    Original     		PDF BUL45 CurreUR150 MUR105 1N400 F/385 nF/1000 F/400 1N5761

    MJE18002G

    Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		PDF MJE18002G MJE18002G O-220 O-220AB 21A-09 MJE18002/D MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    8P08

    Abstract: mtp8p08 MTP8P10 a043 221A-04 AN569 MTM8P08 MTM8P10 8P10 motorola
    Text: MOTOROLA SC XSTRS/R im e F 'd I k3L?asM MOTOROLA □ a cì o a a 3 ? | - r - 3 m SEM IC O N D U C T O R TECHNICAL DATA M TM 8P08 M TM 8P10 MTP8P08 MTP8P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S


    OCR Scan     		PDF 21A-04 O-220AB 8P08 mtp8p08 MTP8P10 a043 221A-04 AN569 MTM8P08 MTM8P10 8P10 motorola

    TP8P10

    Abstract: AN569 MTP8P10 si08 bbc ds 17
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP8P10 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancem ent-M ode S ilico n Gate X This TM O S Power FET is designed for medium voltage, high speed power switching applications such as switching regulators,


    OCR Scan     		PDF MTP8P10 tp8p10 AN569 MTP8P10 si08 bbc ds 17

    MTP8p10

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F böE ]> • b3b7ES4 OD'îflTO'î DOG ■ MOTb M O TO R O LA ■ SEMICONDUCTOR TECHNICAL DATA MTP8P10 Designer's Data Sheet P o w er Field E ffe c t Tran sisto r P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8 AMPERES RDS(on) = 0.4 OHM


    OCR Scan     		PDF MTP8P10 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02 314B03 O-220) MTP8p10

    8P08

    Abstract: MTP8P08 mtp8p
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM8P08 MTM8P10 MTP8P08 MTP8P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e se T M O S P o w e r F E T s are d esig n ed fo r m ed ium vo ltag e ,


    OCR Scan     		PDF MTM8P08 MTM8P10 TQ-204AA 21A-04 O-220AB 8P08 MTP8P08 mtp8p

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .


    OCR Scan     		PDF BUD44D2 St254 MTP8P10 500nH

    TP12N10

    Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection


    OCR Scan     		PDF MJW16206 MJF16206 AN1040. TP12N10 je210 desaturation design 1200 volt npn MPF930 MTP8P10 MUR8100E ex 3863

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85