STMicroelectronics marking code date sot-89
Abstract: 3214W-1-103E D499 GRM1885C1H101JA01 START499D murata REEL label ferrite chip j353 transistor
Text: START499D NPN RF silicon transistor Features • High efficiency ■ Common emitter configuration ■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz ■ Plastic package ■ Linear and non linear operation ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european
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START499D
2002/95/EC
OT-89
START499D
OT-89
STMicroelectronics marking code date sot-89
3214W-1-103E
D499
GRM1885C1H101JA01
murata REEL label ferrite chip
j353 transistor
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Abstract: No abstract text available
Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features Small footprint Buck converter for up to 3A output current application Low EMI noise using an inductor-embedded ferrite substrate High efficiency using synchronous rectifier technology at 2MHz operation
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LXDC55KAAA-205
LXDC55K
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Untitled
Abstract: No abstract text available
Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features Wide Input voltage range : 4.0V to 14.0V User Adjustable Output voltage : 0.8 to 5.3V Small footprint Buck converter for up to 1.5A output current application Low EMI noise by using an inductor-embedded ferrite substrate
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LXDC55FAAA-203
LXDC55F
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Untitled
Abstract: No abstract text available
Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features Small footprint Buck converter for up to 3A output current application Low EMI noise using an inductor-embedded ferrite substrate High efficiency using synchronous rectifier technology at 2MHz operation
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LXDC55KAAA-205
LXDC55K
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Untitled
Abstract: No abstract text available
Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features Wide Input voltage range : 4.0V to 14.0V User Adjustable Output voltage : 0.8 to 5.3V Small footprint Buck converter for up to 1.5A output current application Low EMI noise by using an inductor-embedded ferrite substrate
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LXDC55FAAA-203
LXDC55F
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Untitled
Abstract: No abstract text available
Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features Small footprint Buck converter for up to 3A output current application Low EMI noise using an inductor-embedded ferrite substrate High efficiency using synchronous rectifier technology at 2MHz operation
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LXDC55KAAA-205
LXDC55K
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Untitled
Abstract: No abstract text available
Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features Wide Input voltage range : 4.0V to 14.0V User Adjustable Output voltage : 0.8 to 5.3V Small footprint Buck converter for up to 1.5A output current application Low EMI noise by using an inductor-embedded ferrite substrate
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LXDC55FAAA-203
LXDC55F
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Untitled
Abstract: No abstract text available
Text: LXDC2HL series Micro DC-DC converter 1. Features 2 Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate High efficiency using synchronous rectifier technology at 3MHz operation PFM/PWM automatic mode switching function
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600mA
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Text: LXDC2HL series Micro DC-DC converter 1. Features 2 Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate High efficiency using synchronous rectifier technology at 3MHz operation PFM/PWM automatic mode switching function
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600mA
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Untitled
Abstract: No abstract text available
Text: LXDC2HL series Micro DC-DC converter 1. Features 2 Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate High efficiency using synchronous rectifier technology at 3MHz operation PFM/PWM automatic mode switching function
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600mA
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Untitled
Abstract: No abstract text available
Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features Small footprint Buck converter for up to 3A output current application Low EMI noise using an inductor-embedded ferrite substrate High efficiency using synchronous rectifier technology at 2MHz operation
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LXDC55KAAA-205
LXDC55K
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Untitled
Abstract: No abstract text available
Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features Wide Input voltage range : 4.0V to 14.0V User Adjustable Output voltage : 0.8 to 5.3V Small footprint Buck converter for up to 1.5A output current application Low EMI noise by using an inductor-embedded ferrite substrate
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LXDC55FAAA-203
LXDC55F
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet January 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS02-276RFPP
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J161 mosfet transistor
Abstract: MOSFET J161 100B6R8JW
Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS03-070RFPP
DS02-276RFPP)
J161 mosfet transistor
MOSFET J161
100B6R8JW
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J555
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19125E
Hz--1990
AGR19125EU
AGR19125EF
DS01-215RFPP
J555
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless
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AGR21125E
AGR21125EU
AGR21125EF
DS03-037RFPP
DS03-012RFPP)
sm 4500
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Transistor J182
Abstract: No abstract text available
Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
DS02-326RFPP
Transistor J182
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c5047
Abstract: No abstract text available
Text: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09180E
Hz--895
DS02-342RFPP
c5047
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045EU
AGR21045EF
DS02-380RFPP
DS02-276RFPP)
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Untitled
Abstract: No abstract text available
Text: TAT8801A1H 75 Ω CATV Output Stage Amplifier Applications • CATV Line Amplifiers • HFC Nodes • Head End Equipment 16-pin SOIC Wide Body Package with backside ground paddle Product Features Functional Block Diagram • Wide Bandwidth 40 MHz – 1 GHz
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TAT8801A1H
16-pin
TAT8801A1H
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Untitled
Abstract: No abstract text available
Text: TAT8858A1H CATV Infrastructure Push-Pull Amplifier Applications • • • • CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-16 Wide Package Product Features Functional Block Diagram 75 Ω, 50-1000 MHz Bandwidth GaAs pHEMT & MESFET Technology
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TAT8858A1H
SOIC-16
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Transistor J182
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19060E
Hz--1990
AGR19060EU
AGR19060EF
DS01-216RFPP
Transistor J182
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19090E
Hz--1990
AGR19090EU
AGR19090EF
DS01-117RFPP
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LTC3631-3
Abstract: LTC3642 schematic diagram 12v to 48 dc step up LTC3632 LTC3632E LTC3632EDD LTC3632EMS8E LTC3632I LTC3632IDD LTC3632IMS8E
Text: LTC3632 High Efficiency, High Voltage 20mA Synchronous Step-Down Converter FEATURES DESCRIPTION n The LTC 3632 is a high efficiency step-down DC/DC converter with internal high side and synchronous power switches that draws only 12 A typical DC supply current
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LTC3632
DFN16,
TSSOP16E
QFN24,
60VMAX)
DFN10,
MSOP10E
3632fa
LTC3631-3
LTC3642
schematic diagram 12v to 48 dc step up
LTC3632
LTC3632E
LTC3632EDD
LTC3632EMS8E
LTC3632I
LTC3632IDD
LTC3632IMS8E
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