MURATA REEL LABEL FERRITE CHIP Search Results

STMicroelectronics marking code date sot-89

Abstract: 3214W-1-103E D499 GRM1885C1H101JA01 START499D murata REEL label ferrite chip j353 transistor
Contextual Info: START499D NPN RF silicon transistor Features • High efficiency ■ Common emitter configuration ■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz ■ Plastic package ■ Linear and non linear operation ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european

Contextual Info: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation

Contextual Info: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate

Contextual Info: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation

Contextual Info: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate

Contextual Info: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation

Contextual Info: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate

Contextual Info: LXDC2HL series Micro DC-DC converter 1. Features 2  Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 3MHz operation  PFM/PWM automatic mode switching function

Contextual Info: LXDC2HL series Micro DC-DC converter 1. Features 2  Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 3MHz operation  PFM/PWM automatic mode switching function

Contextual Info: LXDC2HL series Micro DC-DC converter 1. Features 2  Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 3MHz operation  PFM/PWM automatic mode switching function

Contextual Info: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation

Contextual Info: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate

Contextual Info: Preliminary Data Sheet January 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

J161 mosfet transistor

Abstract: MOSFET J161 100B6R8JW
Contextual Info: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

J555

Contextual Info: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

sm 4500

Contextual Info: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless

Transistor J182

Contextual Info: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

c5047

Contextual Info: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

Contextual Info: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: TAT8801A1H 75 Ω CATV Output Stage Amplifier Applications • CATV Line Amplifiers • HFC Nodes • Head End Equipment 16-pin SOIC Wide Body Package with backside ground paddle Product Features Functional Block Diagram • Wide Bandwidth 40 MHz – 1 GHz

Contextual Info: TAT8858A1H CATV Infrastructure Push-Pull Amplifier Applications • • • • CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-16 Wide Package Product Features Functional Block Diagram 75 Ω, 50-1000 MHz Bandwidth GaAs pHEMT & MESFET Technology

Transistor J182

Contextual Info: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Data Sheet July 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

LTC3631-3

Abstract: LTC3642 schematic diagram 12v to 48 dc step up LTC3632 LTC3632E LTC3632EDD LTC3632EMS8E LTC3632I LTC3632IDD LTC3632IMS8E
Contextual Info: LTC3632 High Efficiency, High Voltage 20mA Synchronous Step-Down Converter FEATURES DESCRIPTION n The LTC 3632 is a high efficiency step-down DC/DC converter with internal high side and synchronous power switches that draws only 12 A typical DC supply current