N CHANNEL J FET Search Results

2SK125

Abstract: FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S
Contextual Info: SONY CORP/ COMPONENT PRODS 4TE J> • ñ3flE3ñ3 0003055 7 SONY 2SK125 SO N Y Silicon N-Channel Junction FET Description T ^ J /- 2 S ~ Package Outline Unit: mm The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise

MPS 0715

Abstract: 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola
Contextual Info: Order this document by MPQ2001/D MOTOROLA MPQ2001 Semiconductors BOX 2 0912 • P H O E N IX , A R IZ O N A 85036 Advance Inform ation 2 - NPN SILICON BIPOLAR 2 -N-CHANNEL J-FET QUAD TRANSISTORS SILICON ANNULAR* NPN BIPOLAR, N-CHANNEL J-FET QUAD TRANSISTOR

Contextual Info: NEC NEC Electronics Inc. D e scrip tio n /¿PC356 J-FET INPUT OPERATIONAL AMPLIFIER Pin C o n figu ratio n The juPC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the //PC356 is

2SK1271

Abstract: TEA-1035 MEI-1202 TC-2380 24 V 20 A diode
Contextual Info: NEC J— r W DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1271 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters 03.2 ±0.2 DESCRIPTION The 2SK1271 is N-channel M O S Field Effect Transistor de­ signed fo r high voltage switching applications.

PN4391

Abstract: PN4392 IEC134 PN4393 Vgsoff
Contextual Info: PN4391 to 4393 J V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. QUICK REFERENCE DATA

Contextual Info: \v jì il }\ \\ n a il il vi n /± ± \ il /±±\ il u Æ w txon m mmmm / j u ,- i i _ DEVICES. INC. N-CHANNEL ENHANCEMENT MOS FET 100V. 9.2A, SDF120 SDF120 SDF120 0.2 7 n PARAMETER JAA JAB JDA FEATURES • • •

BFW61

Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
Contextual Info: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.

2N4393

Abstract: 2N4392 2N4391 transistor 4393
Contextual Info: 2N4391 to 4393 J ' - N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching,

TC-2394

Abstract: transistor D 2394 nec 2501 PT-235 2SK1295 MEI-1202 TEA-1035 nec 2702
Contextual Info: DATA SHEET NEC J HMOS FIELD EFFECT POWER TRANSISTOR 2SK1295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1295 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.

A2147

Abstract: 2sk109
Contextual Info: 2SK1098-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET p j j SERIES j • Outline Drawings ■ Features • H ich current • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High forw ard T ran sco n d u ctan ce

Contextual Info: 7110flEb □ G b ? c17S 7T3 « P H I N J in J112 J113 y V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

SIPMOS

Abstract: 2SK1509
Contextual Info: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

Contextual Info: BF410A to D _ J\ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.

BFW61

Contextual Info: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

Contextual Info: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.

2SK1282

Abstract: A 1282 transistor TC-2381 MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC J MOS FIELD EFFECT POWER TRANSISTOR 2SK1282,1282-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

2N4092

Contextual Info: 2N4092 N-CHANNEL J-FET Qualified Per MIL-PRF-19500/431 2.79 T. 1 of 1 Home Part Number: 2N4092 Online Store 2N4092 Diodes N- C HANNEL J - F ET Q ualified Per M IL- PRF - 1 9 5 0 0 / 4 3 1 Transistors

BUK617-500AE

Abstract: TRANSISTOR C 557 B TIC 136 Transistor
Contextual Info: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

nec 7915

Abstract: LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec
Contextual Info: N E C ELECTRONI CS 6427525 N E C I NC öl E LECTRONICS I>e | b427SSS O O lC m ^ 81C 10093 INC NEC Electronics Inc. _ ' The //PC356 is a J-FET input operational am plifier with matched P-channel ion implanted J-FETs. In addition to

2N4093

Contextual Info: 2N4093 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 8.59 Tr. 1 of 1 Home Part Number: 2N4093 Online Store 2N4093 Diodes N- C HANNEL J - F ET Q ualified per M IL- PRF -1 9 5 0 0 / 4 3 1 Transistors

BUK582-100A

Abstract: 2T3 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE J> • 711Ga2b G0b42û4 LSÔ « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode

2N4856

Abstract: 2N4858 2N4860 2N4857 2N48 2N4859 2N4861
Contextual Info: 2N4856 to 4861 J v _ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended fo r low power, chopper o r switching, applications in industrial service.

IMF6485

Abstract: TO71 fet
Contextual Info: IM F6485 Low Noise Dual Monolithic N-Channel J F E T FEATURES GENERAL DESCRIPTION • ê n < 10nV/vHz @ 10Hz This N-Channel Junction FET is characterized fo r ultra low noise applications requiring tig h tly co n trolled and speci­ fied noise parameters at 10 Hz and 1000 Hz. T ig h t match­