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Vishay Siliconix VQ2004J 0.41 A, 60 V, 5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
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VQ2004J Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
VQ2004J	Vishay Telefunken		Original	PDF	49.51KB	4
VQ2004J	Unknown	FET Data Book	Scan	PDF	60.21KB	1
VQ2004J	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	123.38KB	1
VQ2004J	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	85.39KB	1
VQ2004J	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF	33.05KB	1
VQ2004J	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF	181.85KB	1

VQ2004J Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
quad p-CHANNEL Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (£2) v GS(th) (V ) b (A) -6 0 5 V QS = - 1 0 V - 2 t o -4 .5 -0.41 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Drivers: Relays, Solenoids, Lamps,	OCR Scan	VQ2004J VQ2004J S-04279-- 16-Jul-01 quad p-CHANNEL	PDF
b0725 Contextual Info: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •	OCR Scan	VQ2004J P-37655--Rev. b0725	PDF
VQ2004J Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J	PDF
quad p-CHANNEL Abstract: VQ2004J Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	VQ2004J S-04279--Rev. 16-Jul-01 quad p-CHANNEL VQ2004J	PDF
VQ2004J Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J	PDF
VQ2004J Contextual Info: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,	Original	VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J	PDF
VP2410 Contextual Info: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L	OCR Scan	VP0808B/L/M VP1008B/L/M VQ2004J \/PDV10 VQ2006J VPDV10 TP2010L TP2410L VP2410L VPDV10 VP2410	PDF
b0725 Contextual Info: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR Dss Min (V) rDS<on) Max (Q) V g s (Ui) (V) I d (A) -6 0 5 @ V o s = -1 0 V - 2 to -4 .5 -0.41 Features Benefits • • • • • • • • • • High-Side Switching	OCR Scan	VQ2004J 2004J P-37655--Rev. b0725	PDF
VQ2004J Contextual Info: VQ2004J Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) -60 5 @ VGS = -10 V -2 to -4.5 -0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,	Original	VQ2004J 37655--Rev. VQ2004J	PDF
VQ2004J Abstract: quad p-CHANNEL Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	VQ2004J 18-Jul-08 VQ2004J quad p-CHANNEL	PDF
Contextual Info: Tem ic VQ2004J S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V B R D S S M i n ( V ) rn s iim ) M a x (Q ) V e s ta » (V ) I d (A ) -6 0 5 V GS = - 1 0 V - 2 to - 4 .5 -0 .4 1 Features Benefits • • • •	OCR Scan	VQ2004J P-37655--Rev. 25-Jul-94 P-37655--	PDF
quad p-CHANNEL Abstract: vq2004j Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	VQ2004J 08-Apr-05 quad p-CHANNEL vq2004j	PDF
Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì \|g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)	OCR Scan	T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T	PDF
vp0300m Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P	PDF

VP0808B Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P	PDF
BSR78 Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B	PDF
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G	PDF
VPDS06 Contextual Info: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d	OCR Scan	VPDS06 6-204VP1008B) VPDV10 VPDS06	PDF
VP0808M Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VQ2006P VP0300B VP0300M VP0808L VQ2001P	PDF
VP0808B Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P	PDF
VP100 Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L	PDF
VP0808M Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln IN400 VP0300B VP0300M VP0808L VQ2001P	PDF
VP0300M Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300M k 2541 30v IN400 VP0300B VP0808L	PDF
TEMIC K153P Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2	Original	WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910	PDF

VQ2004J Search Results

VQ2004J Price and Stock

Vishay Siliconix VQ2004J

VQ2004J Datasheets (6)

VQ2004J Datasheets Context Search

quad p-CHANNEL

b0725

VQ2004J

quad p-CHANNEL

VQ2004J

VQ2004J

VP2410

b0725

VQ2004J

VQ2004J

quad p-CHANNEL

vp0300m

VP0808B

BSR78

TCA780

VPDS06

VP0808M

VP0808B

VP100

VP0808M

VP0300M

TEMIC K153P