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    N-CHANNEL ENHANCEMENT MODE POWER MOSFET Search Results

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal


    Original     		PDF UTT60N06 UTT60N06 UTT60N06L-TA3-T UTT60N06G-TA3-T UTT60N06L-TN3-R UTT60N06G-TN3-R O-220 O-252 QW-R502-575

    25n06

    Abstract: 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on.


    Original     		PDF 25N06 25N06 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION As an N-channel enhancement mode power MOSFET, the UTC UTF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls


    Original     		PDF UTF3055 UTF3055 UTF3055L-AA3-R UTF3055G-AA3-R UTF3055L-TN3-R UTF3055G-TN3-R OT-223 O-252 QW-R502-318

    UT3404L

    Abstract: 34DL 146-B
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT3404 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical


    Original     		PDF UT3404 UT3404 UT3404L UT3404G UT3404-AE3-R UT3404L-AE3-R UT3404G-AE3-R OT-23 QW-R502-146 UT3404L 34DL 146-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT3404 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical


    Original     		PDF UT3404 UT3404 UT3404L UT3404-AE3-R UT3404L-AE3-R OT-23 QW-R502-146

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical


    Original     		PDF UT6402 UT6402 UT6402L-AE3-R UT6402G-AE3-R UT6402L-AG6-R UT6402G-AG6-R OT-23 OT-26 QW-R502-152

    UT6402

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical


    Original     		PDF UT6402 UT6402 UT6402L UT6402-AE3-R UT6402L-AE3-R UT6402-AG6-R UT6402L-AG6-R OT-23 OT-26 QW-R502-152

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    IRP623

    Abstract: IRP621 IRF620 IRF620 application IRF621 IRF622 IRF623 TC 3162
    Text: - Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF623 IRP623 IRP621 IRF620 IRF620 application IRF621 TC 3162

    rfp14n05

    Abstract: N-Channel Enhancement-Mode 25AF
    Text: — POWER MOSFETs 3 N-CHANNEL POWER MOSFETs PAGE N-CHANNEL POWER MOSFET DATA SHEETS 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs. 3-3 RFD14N06, RFD14N06SM, RFP14N06 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs.


    OCR Scan     		PDF RFD14N05, RFD14N05SM, RFP14N05 RFD14N06, RFD14N06SM, RFP14N06 RFD16N05, RFD16N05SM RFD16N06, RFD16N06SM N-Channel Enhancement-Mode 25AF

    IRF612

    Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
    Text: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V


    OCR Scan     		PDF IRF610, IRF611, IRF612, IRF613 50V-200V IRF612 IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#

    IRF530

    Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
    Text: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V


    OCR Scan     		PDF IRF530, IRF531, IRF532, IRF533 0V-100V IRF532 50V0SS IRF530 L10M IRF531 J56-1 IRF530 mosfet

    IRF3303

    Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
    Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •


    OCR Scan     		PDF IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331

    2N6784

    Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
    Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6784 2N6784 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX

    RLP5N08LE

    Abstract: 720 transistor transistor field-effect transistor
    Text: — POWER MOSFETs 7 INTELLIGENT DISCRETES PAGE INTELLIGENT DISCRETE DATA SHEETS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor 7-3 RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs 7-8 RLP1N06CLE


    OCR Scan     		PDF RFB18N10CS RFV10N50BE RLP1N06CLE RLP1N08LE RLP5N08LE 720 transistor transistor field-effect transistor

    IRFD

    Abstract: IRFD210 D210 IRFD211 IRFD212 IRFD213
    Text: Standard Power MOSFETs- IRFD210, IRFD211, IRFD212, IRFD213 File Number 2316 Power M O S Field-Effect Transistore N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistore 0.45 A and 0.6 A, 150 V - 200 V


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 92CS-33741 IRFD213 IRFD IRFD210 D210 IRFD211 IRFD212

    IRFF223

    Abstract: IRFF222 IRFF220 IRFF221
    Text: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223 1RFF221, IRFF222 IRFF223 IRFF220 IRFF221

    ifr 350 mosfet

    Abstract: IRFF323 IRFF320 IRFF321 IRFF322
    Text: Standard Power MOSFETs- IRFF320, IRFF321, IRFF322, IRFF323 File Number N-Channel Enhancement-Mode Power Field-Effecl Transistors 2.0A and 2.5A, 350V - 400V rDsion = 1-80 and 2.50 N-CHANNEL ENHANCEMENT MODE o Features: • SOA is power-dissipation limited


    OCR Scan     		PDF IRFF320, IRFF321, IRFF322, IRFF323 IRFF322 IRFF323 FF320 ifr 350 mosfet IRFF320 IRFF321

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500

    IRF 3302

    Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
    Text: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited


    OCR Scan     		PDF IRFF430, IRFF431, IRFF432, IRFF433 92CS-3374I IRFF432 IRFF433 IRF 3302 2sc 1894 IRFF430 IRFF431 irf 430

    2n6798 jantx

    Abstract: 2N6798 IH0063 2N6756 QPL-19500
    Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited


    OCR Scan     		PDF 2N6798 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2n6798 jantx IH0063 2N6756 QPL-19500

    transistor f422

    Abstract: f422 IRFF420 IRFF422 IRFF421 IRFF423 RFF422
    Text: Standard Power MOSFETs - IRFF420, IRFF421, IRFF422, IRFF423 File Number N-Channel Enhancement-Mode Power Field-Effect Transistors 1.4A and 1.6A, 450V - 500V r DS on = 3.00 and 4.0fi N-CHANNEL ENHANCEMENT MODE Features: • m m m ■


    OCR Scan     		PDF IRFF420, IRFF421, IRFF422, IRFF423 92CS-3374I IRFF422 IRFF423 transistor f422 f422 IRFF420 IRFF421 RFF422

    mosfet 2n6788

    Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
    Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6788 2N6788 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ mosfet 2n6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV