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    N-CHANNEL JFET 40V DEPLETION Search Results

    N-CHANNEL JFET 40V DEPLETION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TC7PCI3212MT
    		Toshiba Electronic Devices & Storage Corporation 2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP293-4
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL JFET 40V DEPLETION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A PDF

    2sk170 spice

    Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
    Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6 PDF

    zener sot-23 a9

    Abstract: JFET 50ma -40v jfet to 92 SST204
    Contextual Info: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures


    Original     		J/SST201 350mW OT-23 zener sot-23 a9 JFET 50ma -40v jfet to 92 SST204 PDF

    ultra low igss pA mosfet

    Abstract: jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice
    Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.


    Original     		LS830 LS831 LS832 LS833 70nV/Hz ultra low igss pA mosfet jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice PDF

    2n4416 transistor spice

    Abstract: low noise dual P-Channel JFET 3N190 P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power
    Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS


    Original     		3N190 3N191 3N190 3N191 300mW 525mW 2n4416 transistor spice low noise dual P-Channel JFET P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power PDF

    U401 mosfet

    Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
    Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		3N163, 3N164 3N163 3N164 375mW -30ithic U401 mosfet 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice PDF

    jfet transistor

    Abstract: Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice ultra low Ciss jfet Dual PNP Transistor transistor j210 monolithic dual jfet transistor
    Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 150fA TYP. LOW PINCHOFF VP= 2V TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		LS5905 LS5906 LS5907 LS5908 LS5909 150fA jfet transistor Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice ultra low Ciss jfet Dual PNP Transistor transistor j210 monolithic dual jfet transistor PDF

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Contextual Info: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23 PDF

    2N4392

    Abstract: 2N4392CSM
    Contextual Info: 2N4392 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING


    Original     		2N4392 2N4392 2N4392CSM 2N4392CSM-JQR-B 2N4392DCSM 2N4392DCSM-JQR-B 2N4392-JQR-B 2N4392RCSM PDF

    2N4391

    Contextual Info: 2N4391 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING


    Original     		2N4391 2N4391" 2N4391 2N4391CSM 2N4391CSM-JQR-B PDF

    jfet transistor 2n4391

    Abstract: 2N4391 jfet switching JFET -40v
    Contextual Info: 2N4391 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING


    Original     		2N4391 jfet transistor 2n4391 2N4391 jfet switching JFET -40v PDF

    2N4392

    Contextual Info: 2N4392 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING


    Original     		2N4392 100ms 2N4392 PDF

    N-Channel jfet 40V depletion

    Abstract: 2N4392
    Contextual Info: 2N4392 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING


    Original     		2N4392 25allTime N-Channel jfet 40V depletion 2N4392 PDF

    2N4393

    Abstract: n channel 2n4393
    Contextual Info: 2N4393 MECHANICAL DATA Dimensions in mm inches JFET SWITCHING N CHANNEL- DEPLETION 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • LOW ON RESISTANCE • FAST SWITCHING


    Original     		2N4393 2N4393 n channel 2n4393 PDF

    4392 mosfet

    Abstract: MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402
    Contextual Info: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)


    Original     		2N/PN/SST4391 2N/PN/SST4391, 1800mW 350mW 4392 mosfet MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402 PDF

    POWER MOSFET APPLICATION NOTE

    Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
    Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching


    Original     		100nm POWER MOSFET APPLICATION NOTE RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet PDF

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 PDF

    IRF130

    Abstract: jfet jfet cascode intersil jfet AN8610 ronan intersil JFET TO 18 IRFl30 JFET application note
    Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated circuits. Developed by L. W. Nagel in 1973, SPICE II has become a widely available, well-understood design tool for


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    AN-7501

    Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
    Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the


    Original     		100nm AN-7501 CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240 PDF

    vertical JFET

    Abstract: diode c23 jfet cascode AN8610 spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet
    Contextual Info: Harris Semiconductor No. AN8610.1 Harris Power MOSFETs February 1994 SPICING-UP SPICE II SOFTWARE FOR POWER MOSFET MODELING Author: C.F. Wheatley, Jr., H.R. Ronan, Jr., G.M. Dolny The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated


    Original     		AN8610 vertical JFET diode c23 jfet cascode spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet PDF

    100 amp 1000 volt GTO

    Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
    Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard


    Original     		100nm 100 amp 1000 volt GTO AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L PDF

    POWER MOSFET APPLICATION NOTE

    Abstract: vertical JFET AN-7506 IRF130 jfet cascode AN75 Fairchild Power MOSFET resistance control for semiconductor subcircuit diode c23 jfet spice model
    Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note /Title AN75 6 Subect Spicng-Up pice I Softare or ower OSET odelng) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOC NFO dfark The SPICE II simulation software package is familiar to most


    Original     		PDF

    Power MOSFET Switching Waveforms A New Insight

    Abstract: jfet cascode IRF130 AN-7506 vertical JFET intersil jfet mosfet SPICE MODEL
    Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note Title N86 bt pic-Up ce Softre r wer OST odel utho eyrds terrpoon, minctor, er ) OCI O frk The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated


    Original     		PDF

    PNP TRANSISTor experiments

    Abstract: English Electric Valve Bar Display Driver LED manufacturing dashboards AN-378 C1995 FLVD P-Channel Depletion Mode Field Effect Transistor 8349 "P-Channel JFET" national
    Contextual Info: National Semiconductor Application Note 378 David Stewart May 1985 Introduction well suited to automotive applications because of its high brightness level relatively low power consumption and wide operating temperature range Further due to the recent introduction of thick and thin film techniques into display device manufacturing processes it is with relative ease


    Original     		PDF