N0806PE Search Results
N0806PE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3LP04MHContextual Info: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS |
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3LP04MH ENA0551 900mm2 A0551-4/4 3LP04MH | |
3LN04MH
Abstract: sy 360 diode
|
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3LN04MH ENA0550 900mm2 A0550-4/4 3LN04MH sy 360 diode | |
MCH3435
Abstract: MCH5834 SS0503SH IT1180
|
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MCH5834 MCH3435) SS0503SH) 900mm2 N0806PE TC-0000259 A0558-1/6 IT11802 MCH3435 MCH5834 SS0503SH IT1180 | |
VEC2812Contextual Info: VEC2812 注文コード No. N A 0 3 9 2 三洋半導体データシート N VEC2812 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。 |
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VEC2812 900mm2 N0806PE TC-00000280 A0392-1/5 IT08214 IT08216 IT07948 VEC2812 | |
VEC2812Contextual Info: VEC2812 Ordering number : ENA0392 SANYO Semiconductors DATA SHEET VEC2812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package |
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VEC2812 ENA0392 A0392-6/6 VEC2812 | |
MCH3435
Abstract: MCH5834 SS0503SH
|
Original |
MCH5834 ENA0558 MCH3435) SS0503SH) A0558-6/6 MCH3435 MCH5834 SS0503SH |