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    NCC EQUIVALENT Search Results

    NCC EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    NCC EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Bussed Resistor Network

    Abstract: MIL-R-83401 NCC equivalent
    Text: NCC CALIFORNIA MICRO DEVICES BUSSED RESISTOR NETWORK California Micro Devices’ resistor arrays are the hybrid equivalent to the bussed resistor networks available in surface-mount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These


    Original     		PDF 100ppm/C 50Vdc 100ppm 50ppm 25ppm C0970500 Bussed Resistor Network MIL-R-83401 NCC equivalent

    MIL-R-83401

    Abstract: No abstract text available
    Text: NCC CALIFORNIA MICRO DEVICES BUSSED RESISTOR NETWORK California Micro Devices’ resistor arrays are the hybrid equivalent to the bussed resistor networks available in surface-mount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These


    Original     		PDF 100ppm/C 125ne 100ppm 50ppm 25ppm C0970500 MIL-R-83401

    BUSSED RESISTOR

    Abstract: Bussed Resistor Network
    Text: NCC CALIFORNIA MICRO DEVICES BUSSED RESISTOR NETWORK California Micro Devices’ resistor arrays are the hybrid equivalent to the bussed resistor networks available in surfacemount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These chips are


    Original     		PDF -55OC 125OC 125OC 150OC) MIL-STD-202F 150OC 100ppm 50ppm 25ppm BUSSED RESISTOR Bussed Resistor Network

    Saronix xtal Oscillator NCC series

    Abstract: Saronix xtal series saronix crystal 1N4148 DS-133 Saronix NTH M/M/0103 ncc
    Text: SaRonix Crystal Clock Oscillator 5V, CMOS, TTL, Low Current Technical Data NCC Series ACTUAL SIZE Description A crystal controlled, low current hybrid oscillator providing precise rise and fall times to drive CMOS and NMOS microprocessors. Compatible with both CMOS


    Original     		PDF 14-pin 1N4148 DS-133 Saronix xtal Oscillator NCC series Saronix xtal series saronix crystal 1N4148 DS-133 Saronix NTH M/M/0103 ncc

    Saronix xtal Oscillator NCC series

    Abstract: 1N4148 DS-133 saronix crystal Saronix XTAL OSC NC saronix 85 xtal osc
    Text: SaRonix Crystal Clock Oscillator 5V, CMOS, TTL, Low Current Technical Data NCC Series ACTUAL SIZE Description A crystal controlled, low current hybrid oscillator providing precise rise and fall times to drive CMOS and NMOS microprocessors. Compatible with both CMOS


    Original     		PDF 14-pin 1N4148 DS-133 Saronix xtal Oscillator NCC series 1N4148 DS-133 saronix crystal Saronix XTAL OSC NC saronix 85 xtal osc

    DTD-Z Series

    Abstract: 2A105K capacitor 4.7uf 250v polyester 0.22uf 250v capacitor DTDB1H105KZ DTDD1H106KZ 250v 0.33uf capacitor at40C film capacitor 0.1uf 250v United CHEMI-CON
    Text: DTDZ Series Film Ⅲ Stacked Polyester Ⅲ Small Size Ⅲ Radial Lead Ⅲ General Purpose Ⅲ ‫؀‬105؇C Maximum Temperature FILM - RADIAL LEAD DTDZ Ⅲ Actual Size The DTDZ series are miniature polyester film capacitors available from UCC/NCC. These capacitors


    Original     		PDF 250VDC; 125VAC. DTD-Z Series 2A105K capacitor 4.7uf 250v polyester 0.22uf 250v capacitor DTDB1H105KZ DTDD1H106KZ 250v 0.33uf capacitor at40C film capacitor 0.1uf 250v United CHEMI-CON

    5v metal oxide varistor

    Abstract: No abstract text available
    Text: MH Series Ⅲ Metal Oxide Varistor Ⅲ Surface Mount Ⅲ Automotive Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The MH series metal oxide varistors from UCC/NCC are miniature multilayer ceramic chip varistors designed for use as surge protectors in automotive applications. The MH series has a wide operating


    Original     		PDF 40MH270M TNR40MH270M TNR50MH270M 50MH270M 5v metal oxide varistor

    MG 811

    Abstract: TNR Varistor TNR40MGB22
    Text: MG Series Ⅲ Metal Oxide Varistor Ⅲ Surface Mount Ⅲ General Purpose Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The MG series metal oxide varistors are the standard general purpose surface mount varistors from UCC/NCC. These varistors have a wide operating temperature range and are ideal for use in low


    Original     		PDF 30MGB33 30MGB27 30MGB24 30MGB22 30MGB20 30MGB18 30MGB15 30MGB12 40MGB33 40MGB27 MG 811 TNR Varistor TNR40MGB22

    HA-1100

    Abstract: ha1100
    Text: DALLAS SEMICONDUCTOR DS1202, DS1202S Serial Tim ekeeping Chip PIN ASSIGNMENT FEATURES • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation NCC xi C 2 7 SCLK • 24 x 8 RAM for scratchpad data storage


    OCR Scan     		PDF 16-pin DS1202, DS1202S DS1202S8 HA-1100 ha1100

    Tri-State Buffer CMOS

    Abstract: NJU6342 NJU6342H NJU6342XC NJU6342XE 780Q
    Text: N J TR I-STATE Series PACKAGE OUTLINE O NJU6342XC NJU6342XE PIN CONFIGURATION/PAD LOCATION 4.0~6.0V 120MHz equivalent 2 1 8 □ □ □ CONT C x t 1 C 2 8 □ V| D 7 unc + D □ 3 4 a 5 NCC 3 6 D V "C 5 D F o. t CHIP/EMP 8 LINE-UP TABLE VERSION 2 BUFFER GENERAL DESCRIPTION


    OCR Scan     		PDF NJU6342 120MHz 45-55X NJU6342H NJU6342XC NJU6342XE 120MHz NJU6342 Tri-State Buffer CMOS NJU6342XC NJU6342XE 780Q

    Untitled

    Abstract: No abstract text available
    Text: DS1010 DALLAS SEMICONDUCTOR DS1010 10-Tap Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon time delay • 10 taps equally spaced C 1 NcC 2 in • Delays are stable and precise • Leading and trailing edge accuracy ncE 3 TAP 2 [I 4 • Delay tolerance ±5% or ±2 ns, whichever is greater


    OCR Scan     		PDF DS1010 10-Tap 14-pin 16-pin DS1010G

    74LS

    Abstract: DS1010 DS1010-50 DS1010-60 DS1010-75 DS1010G DS1010S
    Text: DS1010 DALLAS SEMICONDUCTOR DS1010 10-Tap Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon time delay • 10 taps equally spaced C 1 NcC 2 in • Delays are stable and precise • Leading and trailing edge accuracy ncE 3 TAP 2 [I 4 • Delay tolerance ±5% or ±2 ns, whichever is greater


    OCR Scan     		PDF DS1010 10-Tap 14-pin 16-pin DS1010 DS10HOD 74F04 74LS DS1010-50 DS1010-60 DS1010-75 DS1010G DS1010S

    Untitled

    Abstract: No abstract text available
    Text: D S 1000 DALLAS DS1000 5-Tap Silicon Delay Line SEMICONDUCTOR PIN ASSIGNMENT FEATURES • All-silicon time delay IN [ 1 T 7 14 D Vce IN £ 1 NC NCC 2 • 5 taps equally spaced NC[ 2 13 ] • Delays are stable and precise n c[ 12 ] TAP 1 3 TAP 2 £ 4 • Both leading and trailing edge accuracy


    OCR Scan     		PDF DS1000 DS1000S 16-PIN 74F04 500ns r-500)

    Untitled

    Abstract: No abstract text available
    Text: DS1013 DALLAS s e m ic o n d u c to r DS1013 3 -in -1 Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon time delay • 3 independent buffered delays • Delay tolerance ±2ns for -10 through -65 Vcc IN 1 E 1 16 3 Vcc NC NCC 2 15 ] NC C 3 14 H NC IN 2 [ I


    OCR Scan     		PDF DS1013 DS101314-PIN DS1013G 14-PIN DS1013K14-PIN 74F04 DS1013.

    Untitled

    Abstract: No abstract text available
    Text: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages


    OCR Scan     		PDF 28-Pin 28-PiD

    MT4LC2M8E7

    Abstract: No abstract text available
    Text: 2 MEG x 8 EDO DRAM l^ lld R O N H P AM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin SOJ (DA-3) 1• Vcc DQ1 c 2 DQ2C 3 □03 £ 4 DQ4C 5 WE# C 6 RAS# C 7 NCC 8 A 10L 9 A0 C 10 A l C 11 A2C 12 A3 13 Vcc 14 MARKING • Voltages


    OCR Scan     		PDF 28-Pin MT4LC2M8E7

    Untitled

    Abstract: No abstract text available
    Text: f f l H A R R IS H S EMICONDUCTOR 1 1 3 9 6 8-Bit, 125MSPS Flash A/D Converter December 1993 Description Features Differential Linearity Error ±0.5 LSB Typ. or Less Integral Linearity Error ±0.5 LSB (Typ.) or Less Built-In Integral Linearity Compensation Circuit


    OCR Scan     		PDF 125MSPS 125MSPS 200MHz 870mW H11396 HI1396

    Untitled

    Abstract: No abstract text available
    Text: Advance Information XM20C64S 64K 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • High Speed: t^A = 55 ns • NO! Batteries!! • AUTOSTORE™ NOVRAM —Automatically Stores RAM data to E2PROM upon Power-fail Detection • Open Drain AUTOSTORE Output Pin


    OCR Scan     		PDF XM20C64S XM20C64S

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D ft l - • HY57V654020A 4 Banks x 4 M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of


    OCR Scan     		PDF HY57V654020A HY57V654020A 864-bit 304x8.

    10d01

    Abstract: No abstract text available
    Text: -«Y U H D «! > -• HY57V654020 4 Banks x 4 U x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 6 7,108,864-bit CMOS Synchronous DRAM ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of


    OCR Scan     		PDF HY57V654020 864-bit 304x8. 10d01

    Untitled

    Abstract: No abstract text available
    Text: SN5491A, SN54LS91, SN7491A, SN74LS91 8-BIT SHIFT REGISTERS M AR CH 1974 - REVISED M AR CH 1988 S N 5 4 9 1 A, S N 5 4 L S 9 1 . . . J P A C K A G E S N 7 4 9 1 A . . . N PACKAG E SN 74LS91 . . . D OR N PACKAG E For applications in: Digital Com puter System s


    OCR Scan     		PDF SN5491A, SN54LS91, SN7491A, SN74LS91 74LS91 SN5491A S91/SN 74LS91,

    soic 208 mil

    Abstract: No abstract text available
    Text: DS1624 DALLAS SEMICONDUCTOR DS1624 Digital Thermometer and Memory FEATURES PIN ASSIGNMENT • Temperature measurements require no external components 1 QE 2 nr 3 QE 4 SDA O L SCL • Measures temperatures from -55°C to +125°C in 0.03125°C increments. Fahrenheit equivalent is


    OCR Scan     		PDF DS1624 13-bit DS1624 soic 208 mil

    Untitled

    Abstract: No abstract text available
    Text: 8051 Microcontroller Family Compatible X88257 256K JÜEK 32,768 x 8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION • Multiplexed Address/Data Bus — Direct Interface to Popular 8051 Family • High Performance CMOS — Fast Access Time, 120ns — Low Power


    OCR Scan     		PDF X88257 120ns --60mA X88257

    ka 2843

    Abstract: No abstract text available
    Text: HY57V56820A L T 32Mx6-bit, 8 K R et, 4Banks, 3.3V DESCRIPTION The HY57V56820A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820A is organized as 4banks of 8,388,608x8.


    OCR Scan     		PDF HY57V56820A 32Mx6-bit, 456bit 608x8. 54pin 262i0 ka 2843