HY57V654020 Search Results

Contextual Info: HY57V654020BTC , 16Mx4-bit, 4K Ref., 4Banks 3.3V DESORPTION The Hynix HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.

HY57V654020

Abstract: Hyundai Semiconductor dram 875mil
Contextual Info: HY57V654020 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of

HY57V654020BTC-75

Contextual Info: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of

Contextual Info: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.

HY57V654020ATC-10S

Abstract: HY57V654020ATC HY57V654020A
Contextual Info: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of

Contextual Info: - H Y U N D ft l - • HY57V654020A 4 Banks x 4 M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of

Contextual Info: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.

dram 4mx4

Abstract: HY57V654020A Hyundai Semiconductor dram HY57V654020ATC-10S
Contextual Info: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of

10d01

Contextual Info: -«Y U H D «! > -• HY57V654020 4 Banks x 4 U x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 6 7,108,864-bit CMOS Synchronous DRAM ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of

Contextual Info: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.

Contextual Info: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL

HY57V654020BTC-10P

Contextual Info: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.

Contextual Info: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of

Contextual Info: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

hy57v168010a

Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
Contextual Info: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.

hy57v168010b

Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Contextual Info: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x

hy57v168010a

Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
Contextual Info: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part

BYTE18

Abstract: BYTE65 HYM7V75AS1601ATNG
Contextual Info: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt

HYM7V75AS1601

Contextual Info: - H Y U N D A I ^16MX72 BIT SDRAM “INTEL” REGISTERED DIMM N-SERIES with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh HYM7V75AS1600A/ HYM7V75AS1601 A/ HYM7V75AS1630A/ HYM7V75AS1631A PRELIMINARY DESCRIPTION

HY57V16161

Abstract: hy57v168010b 1MX16BIT 4MX16
Contextual Info: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram

HY57V161610TC

Contextual Info: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC