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    NE321 Price and Stock

    California Eastern Laboratories (CEL) NE3210S01

    RF MOSFET GAAS HJ-FET 2V SMD
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    California Eastern Laboratories (CEL) NE3210S01-T1B

    RF MOSFET GAAS HJ-FET 2V SMD
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    NEC Electronics Group NE3210S01-T1

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    Bristol Electronics NE3210S01-T1 75
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    NEC Electronics Group NE3210S01

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    NEC Electronics Group NE3210S01-T1B

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    NE321 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32100 NEC Ultra Low Noise K-Band HETRO Junction FET Scan PDF
    NE321000 California Eastern Laboratories ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE321000 NEC C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP Original PDF
    NE3210S01 NEC Semiconductor Selection Guide Original PDF
    NE3210S01 NEC X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET Original PDF
    NE3210S01-T1 NEC X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET Original PDF
    NE3210S01-T1B NEC X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET Original PDF
    NE32183A Unknown FET Data Book Scan PDF
    NE32183A NEC Ultra Low Noise K-Band HETRO Junction FET Scan PDF
    NE32184A Unknown FET Data Book Scan PDF
    NE32184A NEC Ultra Low Noise K-Band HETRO Junction FET Scan PDF
    NE32184A-1.1 Unknown FET Data Book Scan PDF

    NE321 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02S11

    Abstract: max 7176
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB


    Original     		PDF NE321000 NE321000 24-Hour 02S11 max 7176

    22S21

    Abstract: NE329 NEC Ga FET marking A
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 24-Hour 22S21 NE329 NEC Ga FET marking A

    004pF

    Abstract: NE3210S01 NE3210
    Text: NONLINEAR MODEL SCHEMATIC NE3210S01 CGD_PKG 0.001pF Ldx DRAIN Q1 Lgx GATE 0.68nH Rdx 6 ohms Rgx 0.72nH 6 ohms Lsx 0.1nH CGS_PKG 0.04pF CDS_PKG 0.035PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -0.798 RG 8 VTOSC RD


    Original     		PDF NE3210S01 001pF 035PF 1e-14 4e-12 12e-12 36e-12 014e-12 24-Hour 004pF NE3210S01 NE3210

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB


    Original     		PDF NE321000 NE321000 2e-12 08e-12 21e-12 025e-12 24-Hour

    C band FET transistor s-parameters

    Abstract: ne3210s01 NE3210S01-T1 NE3210S01-T1B
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		PDF NE3210S01 NE3210S01 NE3210S01-T1 NE3210S01-T1B C band FET transistor s-parameters NE3210S01-T1 NE3210S01-T1B

    NE3210S01

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		PDF NE3210S01 NE3210S01 NE3210S01-T1 NE3210S01-T1B

    3210S01

    Abstract: ne3210s01 NE3210S01-T1B NE3210S01-T1 NE3210
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 – 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 – • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 NE3210S01-T1B NE3210S01-T1 NE3210

    NE3210S01-T1B

    Abstract: ne3210s01 nec 4814 3210S01 NEC 7812 NE3210S01-T1 ne 7812 NEC Ga FET marking k
    Text: NEC's SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ±


    Original     		PDF NE3210S01 NE3210S01 3210S01 36e-12 014e-12 NE3210S01-T1B nec 4814 NEC 7812 NE3210S01-T1 ne 7812 NEC Ga FET marking k

    NE3210S01

    Abstract: nec 4814 NEC Ga FET marking A 4524 kf NE3210S01-T1
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 24-Hour nec 4814 NEC Ga FET marking A 4524 kf NE3210S01-T1

    NE3210S01

    Abstract: 3210S01 NE3210S01-T1B NE3210S01-T1 ne 7812 d 2689 marking so1
    Text: NEC's SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 m 2. 1 ±


    Original     		PDF NE3210S01 NE3210S01 3210S01 4e-12 12e-12 36e-12 014e-12 NE3210S01-T1B NE3210S01-T1 ne 7812 d 2689 marking so1

    150J10

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 1e-14 4e-12 12e-12 36e-12 014e-12 150J10

    NEC D 809 F

    Abstract: transistor NEC D 586 NE321000 NF 841 nec 0882 s11 diode shottky
    Text: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and


    Original     		PDF NE321000 NE321000 NEC D 809 F transistor NEC D 586 NF 841 nec 0882 s11 diode shottky

    3210S01

    Abstract: NE3210S01-T1B nec 0882 NEC Ga FET marking A NE3210S01-T1 150J10
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 24-Hour NE3210S01-T1B nec 0882 NEC Ga FET marking A NE3210S01-T1 150J10

    NE321000

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE321000 SCHEMATIC Ldx DRAIN Lgx GATE Q1 0.39nH 0.39nH Lsx 0.13nH CGSx 0.02pF CDSx 0.02pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -0.774 RG 3 time VTOSC RD 3 capacitance farads ALPHA 8


    Original     		PDF NE321000 1e-14 2e-12 08e-12 21e-12 025e-12 24-Hour NE321000

    m04 SMD

    Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
    Text: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /


    Original     		PDF NE27200 NE321000 NE3210S01 NE4210S01 NE3503M04 NE3508M04 m04 SMD nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04

    transistor NEC D 882 p

    Abstract: NE321000 nec d 882 p datasheet nec d 882 p opt 300
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    NE32184A

    Abstract: NE32100 NE32183A nec ne3 INE32184A
    Text: NE C/ CALIFORNIA 3QE D tiMSTMlM Ü0Ü20SM fl • NECC 7 r .j/-z r r ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32183A NE32184A OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: NF = 1.0 d B T Y P a tf = 12 GHz NE32100 CHIP • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF bM27M14 0G205M NE32100 NE32183A NE32184A NE321 associat105 34-6393/FAX S88-0279 NOT1CE-1848 NE32184A NE32100 NE32183A nec ne3 INE32184A

    transistor NEC D 586

    Abstract: NEC D 586
    Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility


    OCR Scan     		PDF NE321000, NE29200 NE321000 NE29200 NE321000 P14270E transistor NEC D 586 NEC D 586

    nec 0882 p

    Abstract: nec 0882 p 2
    Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR N E 3 2 1 0 S 0 1 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		PDF NE3210S01 NE3210S01-T1 P14067EJ1V0D NE3210S01 nec 0882 p nec 0882 p 2

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


    OCR Scan     		PDF NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A