NEC B 536 Search Results

DTH11

Abstract: SN2 -2s4 IC-8371 UD73 BEL 548 TRANSISTOR BTS 5002 5.1 around circlet diagram NEC disk controller 75336GC uPD75P338 DIODE s3l
Contextual Info: NEC USER’S MANUAL Ml 4 -B IT SING LE-CHIP MICROCOMPUTER a P D 7 5 3 3 B //PD75P338 • b l427SES 0 [ H 4 f l 4 4 bflT ■ NEC Corporation 1991 This Material Copyrighted By Its Respective Manufacturer . _L The information in this document is subject to change without notice.

75068G

Abstract: 75p06
Contextual Info: NEC USER’S MANUAL p\ 4-B IT SINGLE-CHIP MICROCOMPUTER //PD75064 //PD750BB //PD750B8 //PD7SPOB8 NEC Corporation 19 9 3 bM 2 7 5 P 5 O G T B f lH ? L 03 IH The information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form or by any means without the prior written

NEC 2501 DJ 423

Abstract: "lcd 2 8" PD7533 558 timer NEC disk controller 75336GC PIN DIAGRAM OF 7 segment display LT 542 77777AV upd75390
Contextual Info: USER’S MANUAL NEC M\ 4-B IT SINGLE-CHIP MICROCOMPUTER aPD75336 ^PD75P338 • b457525 00*14044 b6T NEC Corporation 1991 n The information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form or by any means without th e prior w ritten

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

2SC1815

Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
Contextual Info: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %

NEC B 536

Contextual Info: jL A J J Y * lU L J W ÍIP D 4 3 6 1 B 6 5 ,5 3 6 X 1-b it NEC Electronics Inc. Static CMOS RAM Description Pin Configurations The /¿PD4361B is a 65,536-word by 1-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells

6146 tube

Abstract: HRC85 6146 incoloy tube 6146 16389 6146 datasheet diode 6146 Heater Finned gas thermostat
Contextual Info: NEC: Cl. I, Div. 1 & 2, Groups B*, C & D IEC: Cl. I, Zones 1 & 2, Group IIB & H2* NEMA: 7B*CD XC Series Explosionproof Electric Heaters 3A Applications: Standard Features: • Sloped-top cabinet prevents objects that restrict airflow from being set on top

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _//PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The ¿¿PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits C M OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.

PD78C10G-36

Contextual Info: 1 ^ /X Y * fiPD78C1x/C1xA/CG14/CP14 8-B it CMOS M icrocom puters W ith A/D Converter Ly Mid NEC Electronics Inc. Description The family of single-chip microcomputers covered by this data sheet includes the following types: l i PD78C10 /JPD78C11 /JPD78C14 /JPD78C10A

41464

Abstract: M 41464 pd41464 41464 RAM NEC 41464-12 PD41464V-10 PD41464-10 pD41464V M 41464 B
Contextual Info: SEC /¿PD41464 6 5 ,5 3 6 x 4-B IT DYNAMIC NMOS RAM NEC Electronics Inc. Description Pin Configurations The y PD41464 is a 65,536-word by 4-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. The negative voltage substrate bias is

pd71066

Abstract: upd71065 PD71065 D71065 PD72065 FD179X PD72066 uPD71066
Contextual Info: SEC A/PD710 6 5 /6 6 Floppy-Disk Interface NEC Electronics Inc. Description Pin Configurations The /UPD71065 and //PD71066 are CMOS devices that interface a flop py-d isk drive FDD w ith a floppy-disk con tro ller (FDC). The con tro ller can be /¿PD765A/B,

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

D78312

Abstract: d78312a d78312acw UPD7831x CV-AX PD78310 sill filter adapter 082BI ANA 618 BY111
Contextual Info: jk /J C V * * pPD7831xA/78P31xA 16-/8-B», Single-Chip CMOS Microcomputers, Real-Time Control Oriented NEC E lectronics Inc. D escriptio n a Four-channel 8 -bit A /D converter The pPD7831xA fam ily of m icrocomputers is designed for use in process control. They perform all the usual

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

nec A2C

Contextual Info: DATA SHEET NEC / 421165 MOS INTEGRATED CIRCUIT _ _ ¿ ¿ P D 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /¿PD421165 is a 6 5,536 w o rd s b y 16 b its C M O S dy n a m ic R A M w ith o p tio nal h y p e r pag e m ode (EDO ).

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU PD 7 0 7 4 1 V821 32-/16-BIT MICROPROCESSOR The ¿¡PD70741 V821 is a 3 2 /1 6 -b it RISC m icroprocessor th a t uses, as its p ro ce sso r core, the highperform ance 32 -b it m icro p ro ce sso r ¿¡PD70732 (V 810 ™ ) designed for built-in control a pplications. It incorporates

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

uPD43254

Contextual Info: f jP D 4 3 2 5 4 F I ÆJJ W NEC Electronics Inc. 65,536 X 4-Bit Static CMOS RAM Description Pin Configurations T h e /JP D 43254 is a 6 5 ,536 -w o rd by 4-b it s ta tic RAM fa b ric a te d w ith a d v a n c e d silico n -g a te technology. C M O S p e rip h e ra l circu its a n d N -ch an n el m e m o ry cells

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

d431016

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /xPD 431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n T h e /j P D 431016 is a high sp eed , low pow er, 1 048 576 bits 65 536 w o rd s by 16 b its C M O S static R A M . T h e ¿/PD431016 are packed in 44-pin p lastic S O J .

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

LT 543 IC detail

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD42S4210, 424210 4 M -B IT DYNAMIC RAM 256K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /iP D 4 2 S 4 2 lO , 424210 are 2 62 ,144 w o rd s by 16 bits C M O S dyn a m ic R A M s w ith o p tio nal h y p e r page m ode