NEC D 809 K Search Results

NEC D 809 F

Abstract: NEC D 809 NEC D 809 L NEC D 809 k
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTO R 2SK1586 N-CHANNEL MOS FET FOR SWITCHING The 2S K 1586, N-channel vertical type MOS FET, is a switching PACKAG E D IM E N S IO N S U n it : mm device which can be driven directly by the output of ICs having a 5 V

NEC 824A

Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
Contextual Info: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

uc2801

Abstract: pc2801 PH302 MPD6122G-XXX PH302B upc2801 SE303A-C SE313 mpd6122 NEC D 809 F
Contextual Info: DATA S H E E T SEC BIPOLAR ANALOG INTEGRATED CIRCU ITS E L E C T R O N DE VI C E u P C 2 8 A , u P C 2 8 1 IN FR A RED R EM O TE CO N TR O L P R E A M P L IF IE R S The /iPC2800A and fxPC2801 A are bipolar analog ICs specifically developed for use in infrared remote control

EPBAD45

Abstract: ul508a EPBCD45 feeder UL508 EPBAD42 EPBCD42
Contextual Info: IEC Enclosed Listed Power Distribution Blocks Features and Approvals: 1 UL Listed UL1953 2 Flexible Stranded Wire Approval 3 High Short Circuit Current Rating UL508A 4 Integral dovetail features for multi-line stackup 5 Meets Feeder spacing requirements of UL508A

NEC JAPAN MADE 282 185 01

Abstract: ADJ 809 13-100000 NEC AN 1090-0000
Contextual Info: Application Note Usage and Application of µPC8130TA and µPC8131TA Variable Gain Amplifier Silicon MMICs for AGC Unit of Mobile Communication Systems Document No. P13856EJ1V0AN00 1st edition Date Published February 1999 N CP(K) Printed in Japan 1999

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

DMD43301

Abstract: NL10276BC30-17 SM02
Contextual Info: DMD43301 Specifications and Applications Information 10/17/06 Four Lamp DC to AC Inverter Preliminary The ERG DMD43301 DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM

nec 2412

Abstract: N2PB2426 crouse-hinds D2PB D2PB02 2412 NEC
Contextual Info: N2PB Circuit Breaker Panelboards Factory Sealed Single & Two-Pole Breakers 1A Watertight† Cl. I, Div. 2, Groups C, D Weatherproof Cl. II, Div. 2, Groups F, G Corrosion-Resistant Dust-tight NEMA 3, 7CD Div. 2 , 9FG (Div. 2), 12 Applications: • N2PB panelboards are for use in central

D4242-1

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT M E C J L /P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210,424210 are 262 144 words by 16 bits dynamic CMOS RAMs with optional

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: PRELIM INARY DATA S H E E T MOS INTEGRATED CIRCUIT >IEC /J P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PA GE MODE, B Y T E READ/W RITE MODE Description The /^ D 4 2S 42 1 0,424210 are 262 144 words by 16 bits dynamic CM O S RAMs with optional

NL10276BC30-18

Abstract: DMD43584F SM02
Contextual Info: DMD43584F Specifications and Applications Information 07/02/07 Four Lamp DC to AC Inverter Preliminary The ERG DMD43584F DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM

NL10276BC30-17

Contextual Info: DMD43471 Specifications and Applications Information Four Lamp DC to AC Inverter 01/19/11 Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD Series DC to AC inverter

Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz

NL10276BC30-18

Abstract: NL10276BC30-17 IS NL12876BC26-25 DMD43471 NL10276BC30-17 SM02
Contextual Info: DMD43471 Specifications and Applications Information 06/04/09 Four Lamp DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low