NEP 250 Search Results

D2137

Abstract: active year code D2-1-37
Contextual Info: NEU ENGLAND 3 3 E D B bSbM3MÛ I313GQG3S 3 B • NEP NEP T -¿ -ü -m , _ rj.2!oZ?. NEW ENGLAND PHOTOCONDUCTOR dl l — ~ ~~~'• 3 Lead Sulfide Thermoelectrically Cooled Detectors r "•"-"IIZ T Z J Series D-D2-D21 FEATURES • Hermetically Sealed Packages

lead selenide

Abstract: T05 Package activa 150
Contextual Info: NEU ENGLAND _ 33E •5 . D B b5b434ö 0000030 T B NEP NEW ENGLAND PHOTOCONDUCTOR LeadSelenide CL.1.I :. Hermetically Sealed L . Series FM r . . j . 3 FEATURES • Hermetically Sealed Packages • Room Temperature Operation • Customized Wavelength Response

T05-T08

Contextual Info: NEU ENGLAND 33E D • L.5b434fl Ü0GGD34 3, B NEP 1 ' Hl-4\. NEW ENGLAND PHOTOCONDUCTOR Lead Sulfide [ Hermetically Sealed Series AM-BM-CfVI r FEATURES • Hermetically Sealed Packages • Room Temperature Operation • Customized Wavelength Response • Customized Test Procedure

Contextual Info: NEU ENGLAND 33E D bSt,43qfl Q0D0D33 T E3 NEP NEW ENGLAND PHOTOCONDUCTOR 3 Lead Sulfide Plate Cell J Series A-B-C FEATURES • Room Temperature Operation • Customized Wavelength Response • Customized Test Procedure • Guaranteed Delivery • 2 Year Guarantee

PerkinElmer tr 1700

Abstract: PerkinElmer Avalanche Photodiode
Contextual Info: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

Contextual Info: FILTER DETECTORS SPECIFICATIONS Part Number Total Area Active Area mm2 (in) SD 100-33-22-223 5.1 SD 100-34-23-123 `` `` Responsivity Shunt Resistance Dark Current1 Breakdown Voltage1 Capacitance2 NEP Response Time5 Min. (A/W) Min. (MΩ) Typ. (nA) Typ. (V)

Contextual Info: FILTER DETECTORS SPECIFICATIONS Part Number Total Area Active Area mm2 (in) SD 100-33-22-223 5.1 SD 100-34-23-123 `` `` Responsivity Shunt Resistance Dark Current1 Breakdown Voltage1 Capacitance2 NEP Response Time5 Min. (A/W) Min. (MΩ) Typ. (nA) Typ. (V)

Contextual Info: DATASHEET Photon Detection C30659-UV-1 UV APD Preamplifier Module Key Features • 50 MHz system bandwidth  Ultra low noise equivalent power NEP  Blue enhanced spectral response range  Power consumption: 150 mW typ  ±5 V amplifier operating voltages

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

D000033

Abstract: Photoconductor
Contextual Info: NEU ENGLAND 33E D • bSk,434ö D000033 T Ei NEP EI.33.K NEW ENGLAND PHOTOCONDUCTOR 3 Lead Sulfide Z U PlateCell J Series A-B-C FEATURES • Room Temperature Operation • Customized Wavelength Response • Customized Test Procedure • Guaranteed Delivery

D2137

Abstract: vw t4 D2-1-37 T05 Package D21-3-8 New England Photoconductor
Contextual Info: NEU ENGLAND 3 3 E ]> B N EP T ^ l - t U taSbMBMfi □□□□Q3S 3 H • NEP _ 1 3 . S3* 2?. NEW ENGLAND PHOTOCONDUCTOR r ’.u. ^ Lead Sulfide ThermoeSectrically Cooled Detectors r ~:\TZZTI3 Series D-D2-D21 FEATURES • Hermetically Sealed Packages • Customized Wavelength Response

GEP600

Abstract: GM7HS GM2HS GM10HS GM5HS gm7vhr Germanium Power Devices Germanium power germanium power devices corporation GEP700
Contextual Info: a TYPE Ge pn Detectors ACTIVE SHUN T R E S DARK CURRENT TEST REVERSE MAX REVERSE CAPACITANCE DIA. @Vr= 10mV @Vr=Vtest BIAS VOLTS @Vr MAX |iA MAX. (Volts) (Volts) <PF) (mm.) (K 12) Min. Typ. NEP CUT-OFF FREQ. (pWA'Hz) @Vr, 50QR l (Hz.) 30 60 2.0 10 15 27

Contextual Info: NEW ENGLAND PHOTOCONDUCTOR NEU ENGLAND 33E D Cl fe,5t,M3MS 0 G 0 G 0 3 7 7 E l NEP T ^ u M 7 g-"". " _ ' Lead beienicae E Z Z Z Z I ^ rZ Z Z Z Z 3 Plate Cell SeriesF ’ FEATURES • • • • • • Room Temperature Operation Customized Wavelength Response

photodioda

Abstract: N10-13 laser rca rca 210 C30895
Contextual Info: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.

photoconductor

Contextual Info: NEW ENGLAND PHOTOCONDUCTOR NEW ENGLAND jK L S L H i E3 fe.5fc.M3MS 0 0 0 0 0 3 7 7 Cl NEP ' T ’M u M 7 33E D ’ Lead beienicae L— EUT1', .'."I Pl ate Cell Series F FEATURES • • • • • • Room Temperature Operation Customized Wavelength Response

T05 Package

Contextual Info: NEW E N G LA N D _ 33E D • L.5b434fl 0 Q D Q 0 3 4 1 H NEP T ' HI-4V _ NEW ENGLAND PHOTOCONDUCTOR Lead Sulfide C.' . Hermetically Sealed fT~ _ .I. I Series AM-BM-CIVS C Z ~ Z Z Z Z Z Z 3 FEATURES • • • • • • • Hermetically Sealed Packages

NEP 250

Contextual Info: Silicon Photodetector Series 1 BLUE AND UV SENSITIVE Series 1 photodiodes offer a broadband spectral response extending into the UV region. The series is particularly intended for applications from 250 to 430 nm where high levels of illumination occur. The detectors may be operated with reverse bias

OSD15-1

Abstract: OSD60-1 MD1001 LD35 osd5-1 LD20-1 LD35-1 MD100-1 MD25-1 OSD200-1
Contextual Info: 45E D CENTRONIC LTD 1^5187 OOOOGOT 3 • CENT T Silicon Photodetectors «//-^ Series 1 Blue and UV Sensitive Series 1 photodiodes offer a broadband spectral response extending into the UV region. The series is particularly intended for applications where sensitivity in the range from 250 to 430 nm is important.

centronic osd100 6

Abstract: centronic LD2 43IL LD20-1 LD35-1 MD100-1 MD25-1 OSD100-1 OSD15-1 OSD200-1
Contextual Info: CENTRONIX LTD 45E D m m s i f l ? DDODOOT 3 • CENT T*V/-VS" Silicon Photodetectors Series 1 Blue and UV Sensitive Series 1 photodiodes offer a broadband spectral response extending into the UV region. The series is particularly intended for applications where sensitivity in the range from 250 to 430 nm is important.

OSD50-1

Abstract: QD50-1 osd5-1 60E-12 LD20-1 LD35-1 MD25-1 OSD100-1 OSD15-1 QD100-1
Contextual Info: Blue and UV sensitive Series 1 Series 1 photodiodes offer a broadband spectral response extending into the UV region. The series is particularly intended for applications from 250 to 430nm where high levels of illumination occur. The detectors may be operated

Contextual Info: 45E D CENTRONIC LTD m S187 OOOOOOR 3 • C E N T Silicon Photodetectors Series 1 Blue and UV Sensitive Series 1 photodiodes offer a broadband spectral response extending into the UV region. The series is particularly intended for applications where sensitivity in the range from 250 to 430 nm is important.

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.