NLAS4717EPFCT1G Search Results
NLAS4717EPFCT1G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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NLAS4717EPFCT1G |
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Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch; Package: 10 PIN FLIP-CHIP; No of Pins: 10; Container: Tape and Reel; Qty per Container: 3000 | Original | 149.18KB | 11 | ||
NLAS4717EPFCT1G |
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4.5 ohm High Bandwidth, Dual SPDT Analog Switch | Original | 86.79KB | 10 |
NLAS4717EPFCT1G Price and Stock
onsemi NLAS4717EPFCT1GIC SW SPDTX2 3.5OHM 10MICROBUMP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NLAS4717EPFCT1G | Cut Tape |
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NLAS4717EPFCT1G | Reel | 0 Weeks, 2 Days | 3,334 |
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NLAS4717EPFCT1G | 6,000 |
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NLAS4717EPFCT1G | 21,965 | 1 |
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NLAS4717EPFCT1G | 45,000 |
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FLIP ELECTRONICS NLAS4717EPFCT1GIC SWITCH DUAL SPDT 10MICROBUMP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NLAS4717EPFCT1G | Reel | 1,000 |
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Buy Now |
NLAS4717EPFCT1G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NLAS4717EPMTR2G
Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
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Original |
NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G | |
MAX4717
Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
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Original |
NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA | |
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 | |
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 | |
MAX4717
Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
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NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP | |
4717EP
Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
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Original |
NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G | |
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D | |
4717EPContextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D |