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    NLAS4717EPMTR2G Price and Stock

    Rochester Electronics LLC NLAS4717EPMTR2G

    IC SWITCH SPDT X 2 3.5OHM 10WQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NLAS4717EPMTR2G Bulk 610,852 527
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    onsemi NLAS4717EPMTR2G

    IC SWITCH SPDT X 2 3.5OHM 10WQFN
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    DigiKey NLAS4717EPMTR2G Reel
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    Verical () NLAS4717EPMTR2G 481,100 609
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    NLAS4717EPMTR2G 94,271 609
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    NLAS4717EPMTR2G 22,660 609
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    NLAS4717EPMTR2G 8,598 609
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    NLAS4717EPMTR2G 3,000 609
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    NLAS4717EPMTR2G 696 609
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    Quest Components NLAS4717EPMTR2G 155
    • 1 $0.9024
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    • 100 $0.4211
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    Rochester Electronics NLAS4717EPMTR2G 610,325 1
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    • 100 $0.5479
    • 1000 $0.4548
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    Avnet Silica NLAS4717EPMTR2G 143 Weeks 3,000
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    EBV Elektronik NLAS4717EPMTR2G 143 Weeks 3,000
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    Win Source Electronics NLAS4717EPMTR2G 4,300
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    NLAS4717EPMTR2G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    NLAS4717EPMTR2G
    On Semiconductor Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch; Package: WQFN10 1.4 x 1.8, 0.4mm Pitch; No of Pins: 10; Container: Tape and Reel; Qty per Container: 3000 Original PDF 149.18KB 11
    NLAS4717EPMTR2G
    On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF 86.79KB 10

    NLAS4717EPMTR2G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G PDF

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP PDF

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G PDF

    Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D PDF

    4717EP

    Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D PDF