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    NORMAL DIODE 1N Search Results

    NORMAL DIODE 1N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    NORMAL DIODE 1N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N4756A

    Abstract: diode iz zener silcon diode
    Contextual Info: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES Normal Voltage Tolerance about 5% B C DIM MILLIMETERS A 4.2~5.2 B MIN 25.4 2.0~2.7 C 0.71~0.86 D A B D MAXIMUM RATING Ta=25 CHARACTERISTIC


    Original     		1N4756A DO-41 1N4756A diode iz zener silcon diode PDF

    1N3292

    Abstract: 1N3293 2000C
    Contextual Info: 1N3288-1N3297 NAINA SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF Maximum Average Forward Current Te=1250C Maximum peak forward


    Original     		1N3288-1N3297 1250C 400C/g 1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296 1N3293 2000C PDF

    ZENER DIODE with Iz max Iz min

    Abstract: KDZ110VW
    Contextual Info: SEMICONDUCTOR KDZ110VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G K B E Small Package : USC A L 1 FEATURES H F Sharp breakdown characteristic. Normal Voltage Tolerance About 5.0% 2 J D C I MAXIMUM RATING Ta=25


    Original     		KDZ110VW 20x20mm ZENER DIODE with Iz max Iz min KDZ110VW PDF

    ZENER DIODE with Iz max Iz min

    Abstract: KDZ100VW TJ B C
    Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDZ100VW Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G B E Small Package : USC A L K 1 FEATURES H Normal Voltage Tolerance About F Sharp breakdown characteristic. 5.0% 2 J D C I MAXIMUM RATING Ta=25


    Original     		KDZ100VW 20x20mm ZENER DIODE with Iz max Iz min KDZ100VW TJ B C PDF

    1N5832

    Contextual Info: 1N5832 thru 1N5834R Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		1N5832 1N5834R DO-203AB 1N5833 1N5834 PDF

    1N6095

    Contextual Info: 1N6095 thru 1N6096R Naina Semiconductor Ltd. Schottky Power Diode, 25A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AA DO-4 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		1N6095 1N6096R DO-203AA 125oC 1N6096 PDF

    1N5829

    Contextual Info: 1N5829 thru 1N5831R Naina Semiconductor Ltd. Schottky Power Diode, 25A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AA DO-4 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		1N5829 1N5831R DO-203AA 125oC 1N5830 1N5831 PDF

    1N6097

    Contextual Info: 1N6097 thru 1N6098R Naina Semiconductor Ltd. Schottky Power Diode, 50A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		1N6097 1N6098R DO-203AB 1N6098 PDF

    1N5826

    Contextual Info: 1N5826 thru 1N5828R Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		1N5826 1N5828R DO-203AB 1N5827 1N5828 PDF

    IN3881

    Abstract: 1N3880 IN3879-I 1N3879 1N3881 1N3882 1N3883
    Contextual Info: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T~ O T> -n IN3379-IN3883 series Fast Recovery Rectifier 6 Amp Silicon Diode METAL D04 FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity


    OCR Scan     		IN3879-I -r-03-n 7/16th S010AXTRAPOLATED 14nSec, IN3881 1N3880 IN3879-I 1N3879 1N3881 1N3882 1N3883 PDF

    ph 41 zener diode

    Contextual Info: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity


    OCR Scan     		S137SS1 000016M IN3379-IN3883 7/16th DO-35 DO-15 DO-201AD ph 41 zener diode PDF

    SM12CXC170

    Contextual Info: Ordering Stud base diodes are available in both Normal base cathode and Reverse (base anode) polarity. Use N or R respectively in code according to polarity required, e g. N013 - normal polarity, R013 reverse polarity: (1N3899 - normal, 1N38S9R - reverse).


    OCR Scan     		1N3899 1N38S9R SM04PCN046: SM12CXC170 135mm. 1N3900 1N39C1 1N3902 1N3903 SM12CXC170 PDF

    L6574

    Abstract: L6574D 200 Amp bridge mosfet 12v cfl ballast D97IN492 st l6574 ignition mosfet Ballast driver L6574
    Contextual Info: L6574  CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT


    Original     		L6574 250mMA 450mA 80/40ns L6574 SO16N DIP16 L6574D L6574D 200 Amp bridge mosfet 12v cfl ballast D97IN492 st l6574 ignition mosfet Ballast driver L6574 PDF

    L6574D

    Abstract: Ballast driver L6574 L6574 200 Amp bridge mosfet
    Contextual Info: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT


    Original     		L6574 250mMA 450mA 80/40ns L6574 SO16N DIP16 L6574D L6574D Ballast driver L6574 200 Amp bridge mosfet PDF

    Ballast driver L6574

    Abstract: 200 Amp mosfet CFL DC 12V L6574 L6574D 600v 10 amp mosfet 330nF capacitor ELECTRONIC BALLAST 12v
    Contextual Info: L6574  CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT


    Original     		L6574 250mMA 450mA 80/40ns L6574 SO16N DIP16 L6574D Ballast driver L6574 200 Amp mosfet CFL DC 12V L6574D 600v 10 amp mosfet 330nF capacitor ELECTRONIC BALLAST 12v PDF

    Voltage to Current Converters

    Abstract: L6574 L6574D L6574 application zvs driver
    Contextual Info: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING PRODUCT PREVIEW HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT


    Original     		L6574 250mMA 450mA 80/40ns L6574 Voltage to Current Converters L6574D L6574 application zvs driver PDF

    L6574D

    Abstract: L6574 Voltage to Current Converters Ballast driver L6574 CFL DC 12V
    Contextual Info: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING PRODUCT PREVIEW HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT


    Original     		L6574 250mMA 450mA 80/40ns L6574 L6574D Voltage to Current Converters Ballast driver L6574 CFL DC 12V PDF

    1N5819 SOD-123

    Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling


    Original     		1N5819 OD-123 1N5819L 1N5819-CA2-R 1N5819L-CA2-R QW-R601-008 1N5819 SOD-123 Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R A1N5819 PDF

    1N4148 diode

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		1N4148 1N4148 1N4148L 1N4148-AE3-R 1N4148L-AE3-R OT-23 1N4148-AL3-R 1N4148L-AL3-R OT-323 1N4148-CA2-R 1N4148 diode PDF

    D1N4150

    Abstract: 1N4150
    Contextual Info: Transys Electronics L I M I T E D 1N4150 HIGH SPEED SILICON SWITCHING DIODE DO-35 Glass Axial Package FEATURES General Purpose used in Computer and Industrial Applications o ABSOLUTE MAXIMUM RATINGS Ta=25 C unless specified otherwise DESCRIPTION SYMBOL VR


    Original     		1N4150 DO-35 DO-35 D1N4150 1N4150 PDF

    laser transmitter circuit diagram

    Abstract: MAX3263 2 Wavelength Laser Diode circuit laser diode pulsed 6 pin laser diode automatic laser power control PDF PIN laser DIODE DESCRIPTION PIN DIODE DRIVER CIRCUITS MAX3263CAG laser diode driver circuit automatic power control
    Contextual Info: 19-0432; Rev 0; 9/95 Single +5V, Fully Integrated, 155Mbps Laser Diode Driver _Features ♦ Rise Times Less than 1ns ♦ Differential PECL Inputs ♦ Single +5V Supply ♦ Automatic Power Control ♦ Temperature-Compensated Reference Voltage


    Original     		155Mbps MAX3263CAG laser transmitter circuit diagram MAX3263 2 Wavelength Laser Diode circuit laser diode pulsed 6 pin laser diode automatic laser power control PDF PIN laser DIODE DESCRIPTION PIN DIODE DRIVER CIRCUITS MAX3263CAG laser diode driver circuit automatic power control PDF

    1N4148 diode

    Abstract: 1N4148L 1N4148 diode SOD 80 1N4148 1N4148 SOT-23 1N4148 sod123 DIODE 1N4148 Sot23 PACKAGE specifications of 1n4148 diode 1N4148 surface mount 1N4148 SOD323
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		1N4148 1N4148 1N4148L 1N4148G 1N4148-AE3-R 1N4148L-AE3-R 1N4148G-AE3-R 1N4148-AL3-R 1N4148L-AL3-R 1N4148G-AL3-R 1N4148 diode 1N4148L 1N4148 diode SOD 80 1N4148 SOT-23 1N4148 sod123 DIODE 1N4148 Sot23 PACKAGE specifications of 1n4148 diode 1N4148 surface mount 1N4148 SOD323 PDF

    1N60 mosfet

    Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


    Original     		OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 PDF

    1N60AL

    Abstract: UTC 1N60AL 1N60A 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A PDF