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    NPDS5912 Search Results

    NPDS5912 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NPDS5912 Fairchild Semiconductor N-Channel General Purpose Dual Amplifier Original PDF
    NPDS5912 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    NPDS5912 National Semiconductor N-Channel General Purpose Dual Amplifier Scan PDF
    NPDS5912 National Semiconductor Dual JFETs Scan PDF
    NPDS5912 National Semiconductor General Purpose Dual JFETs Scan PDF

    NPDS5912 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPDS5912

    Abstract: NPDS5911
    Text: NPDS5911 NPDS5912 S2 NC D2 G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 25 VGS Gate-Source Voltage 25


    Original     		PDF NPDS5911 NPDS5912 NPDS5911 NPDS5912

    2n5248

    Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
    Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640


    Original     		PDF 2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original     		PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    Untitled

    Abstract: No abstract text available
    Text: e D iscrete POWER & S ign al Technologies yITTE1 i 1 S w k liiiv SEMICONDUCTOR NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units


    OCR Scan     		PDF NPDS5911 NPDS5912

    25CC

    Abstract: NPDS5911 NPDS5912
    Text: NPDS5911 I NPDS5912 Discrete POWER & Signal Technologies National e * Semiconductor" NPD S5911 N PD S5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* ta=25°cunie«otherwisenoted Parameter Symbol Value Units


    OCR Scan     		PDF NPDS5911 NPDS5912 V00-1BV: bS0113D 25CC NPDS5912

    NPDS5911

    Abstract: No abstract text available
    Text: • E S W C D N iD U i: NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol T A = 2 5 ° C unless o th e rw ise noted Parameter Value Units V V dg Drain-Gate Voltage 25 V gs Gate-Source Voltage


    OCR Scan     		PDF NPDS5911 NPDS5912 The01

    Untitled

    Abstract: No abstract text available
    Text: S S M IQ C S S D U U T O R NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V dg Drain-Gate Voltage 25 V V gs Gate-Source Voltage 25


    OCR Scan     		PDF NPDS5911 NPDS5912 NPDS5911

    NPD5566

    Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
    Text: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15


    OCR Scan     		PDF bSQ1130 2N3955 2N3956 2N3958 2N5197 2N5564 2N5565 2N5566 2N5906 2N5908 NPD5566 npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 NPD8303

    NPDS402

    Abstract: TO-69 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301
    Text: This _JFETs Material tr Discrete POWER & Signal Technologies National In a Semiconductor tH IH ÜJ ” General Purpose Dual JFETs a Copyrighted o □ -p a -C □9 ÜJ J] By ru Its Respective ro k Device No. Case Style Op. Char. ^0«1! ^0* VM « •„ mV


    OCR Scan     		PDF NPDS402 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301 NPDS8302 TO-69

    NPD5566

    Abstract: NPDS5564 2N5911 2N6485 SOIC-8
    Text: N Channel Vp Device V Min Max Gfc V Q81-2 (mmho) Min Max VOS (mV) Max Drift QM C) AVgs Max ' ' ' •dss ßfc Match % Match % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50 5 5 TO-71 2N3958 1 4.5 1 3 25 100 15 15 TO-71 2N5197 0.7 4.0 1 4


    OCR Scan     		PDF

    NPD5564

    Abstract: NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets
    Text: Dual JFETs • b5D1130 DD^^SDS bSD « N S C S NATL SEHICOND DISCRETE N Channel vP Device (V) Min Max G* VGS1-2 (mmho) Min Max Vos (mV) Max Drift (nV/C) A V bs Max ßfc ■oss Match Match % % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50


    OCR Scan     		PDF b5D1130 T0-71 T0-78 NPD5564 NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets

    MMBF310

    Abstract: bfj113 NPDS PN5434 BF244A MMBF4119 MMBFJ201
    Text: Fairchild Semiconductor [¡ ¡ g ^ g p0Wgr an J 3¡qna| TeChnOlOQÌeS Selection Guides Surface Mount SOT-23, Through-Hole TO-92 and Dual SOB JFETs loss M in/ M ax mA V GS (off M in/M ax Part Number Volts Id |iA Gfs M in/ M ax mS sv 9» M in S0T-23/T0-92 •d s s


    OCR Scan     		PDF OT-23, S0T-23/T0-92 MMBFJ201/J201 MMBF4117/PN4117 MMBF4119/PN4119 MMBF4392/PN4392 11/J111 BFJ113/J113 BF244A BF244C MMBF310 bfj113 NPDS PN5434 MMBF4119 MMBFJ201