NPDS8301
Abstract: NPDS8302 NPDS8303
Text: NPDS8301 NPDS8302 NPDS8303 S2 NC D2 G2 G1 NC SO-8 S1 D1 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 40 VGS Gate-Source Voltage
|
Original
|
PDF
|
NPDS8301
NPDS8302
NPDS8303
NPDS8301
NPDS8302
NPDS8303
|
2n5248
Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640
|
Original
|
PDF
|
2N5555
2N5638
2N5639
2N5640
PN4360
PN5033
2n5248
PF5101
2N5248 equivalent
2N5247
PN4857
PN4858
U1897
2N5245
PF5301-2
2N5460
|
1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
|
Original
|
PDF
|
1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
|
S8302
Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Text: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage
|
OCR Scan
|
PDF
|
NPDS8301
NPDS8302
NPDS8303
bSQ1130
S8302
S8303
NPDS8303
|
Untitled
Abstract: No abstract text available
Text: B E M iC O N P U C T O R m NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage
|
OCR Scan
|
PDF
|
NPDS8301
NPDS8302
NPDS8303
NPDS8301
NPDS8302
|
Untitled
Abstract: No abstract text available
Text: D iscrete POW ER & S ig n a l Technologies S - S V J iO O N O L iC ì T O ^ ! •••:•: NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25 °C unless otherwise noted Parameter
|
OCR Scan
|
PDF
|
NPDS8301
NPDS8302
NPDS8303
|
Untitled
Abstract: No abstract text available
Text: D is c re te PO W E R & S ig n a l T ech n ologies SE M C O N O U C T Q R ; NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Màximum RâtinÇjS Symbol TA = 25°C unless otherwise noted Parameter Value Units
|
OCR Scan
|
PDF
|
NPDS8301
NPDS8302
NPDS8303
|
NPDS402
Abstract: TO-69 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301
Text: This _JFETs Material tr Discrete POWER & Signal Technologies National In a Semiconductor tH IH ÜJ ” General Purpose Dual JFETs a Copyrighted o □ -p a -C □9 ÜJ J] By ru Its Respective ro k Device No. Case Style Op. Char. ^0«1! ^0* VM « •„ mV
|
OCR Scan
|
PDF
|
NPDS402
NPDS403
NPDS404
NPDS406
NPDS5565
NPDS5566
NPDS5911
NPDS5912
NPDS8301
NPDS8302
TO-69
|
MMBF310
Abstract: bfj113 NPDS PN5434 BF244A MMBF4119 MMBFJ201
Text: Fairchild Semiconductor [¡ ¡ g ^ g p0Wgr an J 3¡qna| TeChnOlOQÌeS Selection Guides Surface Mount SOT-23, Through-Hole TO-92 and Dual SOB JFETs loss M in/ M ax mA V GS (off M in/M ax Part Number Volts Id |iA Gfs M in/ M ax mS sv 9» M in S0T-23/T0-92 •d s s
|
OCR Scan
|
PDF
|
OT-23,
S0T-23/T0-92
MMBFJ201/J201
MMBF4117/PN4117
MMBF4119/PN4119
MMBF4392/PN4392
11/J111
BFJ113/J113
BF244A
BF244C
MMBF310
bfj113
NPDS
PN5434
MMBF4119
MMBFJ201
|
