NPN TRANSISTOR 5 WATTS Search Results

MJE521

Abstract: MJE371
Contextual Info: ON Semiconductor MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers

mje521 npn

Contextual Info: ON Semiconductor MJE521 Plastic Medium−Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers

MJE371

Abstract: MJE521
Contextual Info: ON Semiconductort MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers

Contextual Info: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Die Outline MP4T80100 Features • • • MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT 6GHz Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when

MP4T80100

Abstract: MP4T801 M-Pulse Microwave NPN transistor 5 watts chip die npn transistor
Contextual Info: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features • • • MP4T80100 Die Outline MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT 6GHz Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

IC IL 117

Abstract: 2N5011 2N5339A transistor sit TRANSISTOR 800h 2N5010 2N5012 2N5013 2N5152 2N5154
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 IC/ VCE min/max @ A/V PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 ¡¡I NPN TO-5

2N3440A

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5

nec 2sd882

Abstract: 2sd882 nec 2SD882
Contextual Info: NPN SILICON POWER TRANSISTOR 2SD882 DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC con­ verter and relay driver. PACKAGE DIMENSIONS in millimeters inches 8 .5 M A X . ( 0 .3 3 4 M A X .)

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339

2n5642

Abstract: 2N5642 motorola 2N5642 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •

MJE521

Abstract: Motorola design of audio amplifier MJE371 mje521 npn
Contextual Info: MOTOROLA Order this document by MJE521/D SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

Contextual Info: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

RF NPN POWER TRANSISTOR l band

Abstract: transistor su 312
Contextual Info: • 0 D1 7 5 4 4 sm ■ MITSUB.SH. RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on UHF band mobile radio applications.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H

2SC2628

Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X

MJ410

Contextual Info: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.

MJ410

Abstract: NPN 200 VOLTS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor 400 volts.50 amperes
Contextual Info: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.

MRF5175 transistor

Abstract: MRF5175 transistor 2sc 546
Contextual Info: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver

TIP36

Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —

2N5189

Abstract: MM5189 75 watt npn switching transistor
Contextual Info: M M 5 1 8 9 s i l i c o n NPN SILICON ANNULAR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR TRANSISTOR . . . designed for use in high-current, high speed switching, and core driver applications. • • Collector-Emitter Breakdown Voltage —

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • • • High Collector-Emitter Voltage —

transistor Pout 5W

Contextual Info: ERICSSON ^ PTB 201 59 5 Watts, 900 MHz RF Power Transistor Preliminary Description Key Features The 20159 is NPN, common emitter RF Power Transistor intended for 24VDC operation across the 850-960 MHz frequency band. It is rated at 5 Watts minimum output power and may be used for