NPN TRANSISTOR VCEO 80V 100V DARLINGTON IC 8A Search Results

TIP102

Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
Contextual Info: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.

NPN Transistor 8A

Abstract: TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107

TIP102

Abstract: TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

CJF6388

Abstract: CJF6668
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications

NPN Transistor VCEO 80V 100V

Abstract: darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications

DARLINGTON 3A 100V npn array

Contextual Info: MP6901 SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Package with Heat Sink Isolated to Lead. (SIP 12 Pin)

BDX53C

Abstract: BDX53 BDX53B BDX53 equivalent equivalents transistor bdx53 bdx54 darlington bdx53 BDX53A transistor darlington transistor bdx53c
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS,AUDIO AMPLIFIERS APPLICATION POWER LINEAR AND SWITCHING APPLICATIONS •Complementary to BDX54/54A/54B/54C respectively TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic

NTE2556

Abstract: NPN Transistor VCEO 80V 100V
Contextual Info: NTE2556 Silicon NPN Transistor Darlington, Motor/Relay Driver Features: D High DC Current Gain D High Current Capacity D Wide ASO Range Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers D Voltage Regulator Control Absolute Maximum Ratings: TA = +25°C unless otherwise specified

POWER TRANSISTOR TO-220 CASE TIP100

Abstract: RESISTORs full line TIP102 Darlington transistor
Contextual Info: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

TIP100

Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP100/101/102

TIP100

Abstract: TIP101 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor
Contextual Info: TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Resistors NPN Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min.

Contextual Info: BDX54/A/B/C BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102

BDX33 application notes

Abstract: bdx33c bdx33
Contextual Info: BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

8DX54C

Abstract: bdx54 bdx54a
Contextual Info: BDX54/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage

Contextual Info: BDX54/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BDX53, BDX53A, BDX53B and BDX53C respectively ABSOLUTE MAXIMUM RATINGS Characteristic

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

NPN Transistor 2N3055 darlington

Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

BDX53 equivalent

Abstract: bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A
Contextual Info: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit

BDX53 equivalent

Abstract: bdx53c equivalent
Contextual Info: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • • Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features • • Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit