NS06 Search Results

b0349

Abstract: B0817 1/transistor b0349 to-53 2N3577 blx10 diode 300U 2S078 B0379 b0371
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 SOT5512 SOT5512 SOT5912 B0377-25 2S01083 2S0975 B0321 B0321 ~g~~~ 25 30 2S01779 2N3138 2N3140 2N3142 2N3144 BOY11 BOY11 2S012A ~~~1~8U 35 40 BSS15 2N5320 NS06178 2N6179 S2N4150 S2N4150-1 BOB29-10 BOB29-6

Contextual Info: NS063 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC640

Abstract: 3N27 BC130C
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC114 transistor

Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

ns032j0lbjw00

Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Contextual Info: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

laser SG-2000

Abstract: PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12
Contextual Info: Optoelectronic components Features max. pulse power ≥ 150 W @ 910 nm pulse lengths from < 1 ns to > 160 ns short rise and fall times max. pulse amplitude 80 – 100 A compact housing complete unit – no additional equipment needed adjustable pulse power optional

Contextual Info: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics „ Single 1.8V read, program and erase (1.70V to 1.95V)

Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

b0348

Abstract: 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 SML69503 SML69511 SML69603 SML69611 SML3503 SML3507 SML3511 SML3515 ~b~~~~4 25 30 SOT3554 SOT3554 B0638 SOT3551 SOT3551 SOT3551 SOT3577 SOT3577 ~~:g77 35 40 BLX40 BLX40 SOT69503 SOT69503 SOT69603 SOT69603

ADC0808

Abstract: ADC0816 PIN DIAGRAM ADC0816ccn NS066 MM74C948 LM301 military ADC0817 AN-258 256R ADC0809
Contextual Info: ADC0816/ADC0817 8-Bit µP Compatible A/D Converters with 16-Channel Multiplexer General Description Features The ADC0816, ADC0817 data acquisition component is a monolithic CMOS device with an 8-bit analog-to-digital converter, 16-channel multiplexer and microprocessor compatible control logic. The 8-bit A/D converter uses successive

S71VS128R

Abstract: S71VS marking bjw S71VS064R S71NS-N NS064N S29NS-N S71NS064NA0 Spansion NAND Flash S71NS064N80-RA
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

NS02FW

Contextual Info: 9 1 IN S type NS CONNECTOR IMPROVED DESIGN. MINIATURIZATION AND WEIGHT REDUCTION OF THE EXISTING S-TYPE CONNECTOR OF THE 58 SERIES. DISTINCTIVE FEATURES 1. STABLE/SECURE MATING ACTION BETWEEN MALE AND FEMALE CONNECTOR. 2. PRE-SET REAR HOLDER. 3. DOUBLE LOCKING MECHANISM TO PREVENT TERMINAL PUSH-OUT.

S71NS064NA0

Abstract: A-DQ15 NS064N S29NS-N S71NS-N
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)

Spansion NS064N

Abstract: S71NS128P ns064n S71NS064NA0 Spansion NAND Flash DIE S29NS-N S71NS-N PSRAM* MuxpSRAM JEP95
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

NS256N

Abstract: S29NS-N S29NS-P VDC048 VDE044 128M256 NS128N
Contextual Info: S29NS-N to S29NS-P Migration Migrating from the NS-N 110 nm to the NS-P (90 nm) Application Note Introduction Every effort was made to ensure seamless migration from the S29NS-N to the S29NS-P. Software Migration Considerations There are very few changes required in SW when migrating from the S29NS-N to S29NS-P

ABB-1622-CBA

Abstract: a2358 BS9522 C2508 MS3191 C2516 MS3191A F0032 C2502 2272 m4
Contextual Info: AB CONTROLS AND CONNECTORS LTD The ABB M.S. bayonet connector series, based on the M.S. series of connectors conforming to U.S.A. specification Mil-C-5015 and initially developed for aircraft applications, is today extensively used in the fighting vehicle, commercial land and sea transportation, telecommunication and

st25a

Abstract: ST25C transistor 2N905 2N904 2N906 ST25A transistor TRANSISTOR st25a ST25C 2SC182 TRANSISTORS 132 GD
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

TIL78

Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

transistor c124 esn

Abstract: transistor SA235 S71NS064NA0
Contextual Info: S71NS128NA0/NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM

Contextual Info: S71NS-N MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16 , 128 Mb (8 Mb x 16) and pSRAM 64 Mb (4 Mb x 16) with pSRAM: 64 Mb (4 Mbx16), 32 Mb (2 Mb x 16) and 16 Mb (1 Mb x 16) ADVANCE INFORMATION Data Sheet

ABB Group

Abstract: grommet connector amp Abb diode ac 500 abb ABB Semiconductors MS CONNECTORS abb S nS06
Contextual Info: ABB MS Bayonet Connectors Technical Data Mechanical & Electrical Features Mechanical Features: Contact Current Rating: Coupling: 3 pin bayonet. Number of Contacts: From 1 to 61. Contact Size AWG Metric Max Current @ 200 C * Rated Current De-rated @ 850 C *