2SC287 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)

smd marking MY

Abstract: marking MY 2SC287 2SC2873 MY SMD MARKING
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W Absolute Maximum Ratings Ta = 25 Parameter Symbol

2SC2877

Abstract: 2SA1217
Contextual Info: SavantIC Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts

Contextual Info: SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC2873 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. 1.6 MAX. Q4±a05 FEATURES: . Low Saturation Voltage •• vCE(sat)=0.5V(Max.) u (IC=1A) +aoa a45~ao5 . High Speed Switching Time : tstg=1.0/<s(Typ.)

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W (Mounted on Ceramic Substrate) Absolute Maximum Ratings Ta = 25

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

Contextual Info: 2SC2873 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2873 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

2SC2872

Contextual Info: h ~7 > y 7 $ /Transistors 2SC2872 2SC2872S 2SC2872/2SC2872S NPN /M edium Power Am p. Epitaxial Planar N P N S ilicon Transistors • WÄ • W f i \H£|Ü<|,/Diinensions U nit : mm 1) V ce (s a tj^ S fit 2SC2872 h *7 2SC 2 8 7 2 S h ri 8±ci VcE (s a ti= 4 0 m V Typ.

2SC2879

Abstract: 2sc2879 transistor
Contextual Info: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency

Contextual Info: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)

2sc287a

Abstract: J JB transistor
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC287A B VHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D IS K MOLD" D E S C R IP T IO N P A C K A G E D IM E N S IO N S (U nit : mm) The 2SC287A(B) ¡5 an NPN silicon epitaxial transistor intended for use as V H F oscillator in a tuner of a T V receiver.

Contextual Info: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High speed switching time: tstg = 1.0 µs (typ.)

2SC2878

Abstract: 2SC2878 A
Contextual Info: 2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V min • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

pnp hfe 120-240

Abstract: 2SA1217 2SC2877 2SC28
Contextual Info: JMnic Product Specification 2SA1217 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2877 ・Good linearity of hFE APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stage of 5 watts

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

2SC2877

Abstract: 2SA1217
Contextual Info: Inchange Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts

2SA1217

Abstract: 2SC2877
Contextual Info: Inchange Semiconductor Product Specification 2SA1217 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts

2SC2878

Abstract: transistor 2sc2878
Contextual Info: 2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications • Unit: mm High emitter-base voltage: VEBO = 25 V min • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2873 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 2 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage

2SC287A

Abstract: 2sc287 SC4242
Contextual Info: 2SC287A 2SC287A =l> h 7 V i / T ^ / N P N NPN V H Ff-a—^ SILICON EPITAXIAL TRANSISTOR TV Tuner Local Oscillator 7 0 D f - X ^ / M IC R O D IS K 18/FEATURES • SV' fT (1100 MHz TYP. vhf Co •rb'b f* „ (10ps TYP.) (* i <0 ¿* /PACKAGE DIMENSIONS (Unit:mm)

2SC2878

Contextual Info: TOSHIBA 2SC2878 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC2878 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • • High Emitter-Base Voltage : Ve b O ~ 25V Min. High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA) Low On Resistance