NTE21 Search Results

NTE2107

Contextual Info: NTE2107 Integrated Circuit NMOS, 4K Dynamic RAM DRAM Description: The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the latest memory design features and can be used in a wide variety of applications, from those which

NTE20

Abstract: NTE21
Contextual Info: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Silicon NPN Darlington transistor

Contextual Info: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.

NTE218

Abstract: vce 1v
Contextual Info: NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: D Low Saturation Voltage – 0.6VCE sat @ IC = 1A D High Gain Characteristics – hFE @ IC = 250mA: 30–100

NTE21128

Contextual Info: NTE21128 Integrated Circuit NMOS, 128K 16K x 8 UV EPROM Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user

NTE20

Abstract: NTE21
Contextual Info: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

germanium transistor pnp

Abstract: nte213
Contextual Info: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:

Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO| C 5| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128

NTE2128

Contextual Info: NTE2128 Integrated Circuit 16K 2048 x 8−Bit StaticRandom Access Memory (RAM) Description: The NTE2128 is a 16,384−bit Random−Access Memory (RAM) device in a 24−Lead DIP type package organized as 2048 words by 8 bits. Using a scaled NMOS technology, its design provides the

Contextual Info: NTE218 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)3 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

NTE2117

Contextual Info: NTE2117 Integrated Circuit 16K Dynamic Random Access Memory RAM Description: The NTE2117 is a new generation MOS dynamic random access memory circuit in a 16−Lead DIP type package organized as 16,384 x 1−bit and incorporates advanced circuit techniques designed

NTE130

Abstract: NTE130MP NTE219 NTE219MCP
Contextual Info: NTE130 NPN & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

NTE211

Abstract: NTE210
Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications

NTE2102

Abstract: NTE210
Contextual Info: NTE2102 Integrated Circuit NMOS, 1K Static RAM SRAM , 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
Contextual Info: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.

Contextual Info: NTE21256 262,144–Bit Dynamic Random Access Memory DRAM Description: The NTE21256 is a 262,144 word by 1–bit dynamic Random Access Memory. This 5V–only component is fabricated with N–channel silicon gate technology. Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard

NTE2114

Contextual Info: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for

NTE216

Abstract: driver transistor hfe 60 vce 1v
Contextual Info: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

NTE2147

Contextual Info: NTE2147 Integrated Circuit 4K Static Random Access Memory SRAM Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative

NTE65101

Abstract: NTE21128 NTE21256 NTE8255 GJA9
Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns

NTE2164

Contextual Info: NTE2164 Integrated Circuit 65,536 X 1 Bit Dynamic Random Access Memory Description: The NTE2164 is 65, 536 words by 1 bit Dynamic N−Channel MOS RAM designed to operate from a single +5V power supply. The negative−voltage substrate bias is internally generated−its operation

NTE2104

Contextual Info: NTE2104 Integrated Circuit 4096 X 1 − Bit DYNAMIC RAM Description: The NTE2104 is a 4096 word by 1 bit MOS random access memory circuit fabricated with an N − Channel Silicon Gate Process. The NTE2104 employs a single transistor storage cell utilizing a dynamic control circuitry to achieve optimum performance with low power dissipation.

vce 1v

Abstract: NTE216
Contextual Info: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

NTE20

Abstract: NTE21
Contextual Info: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)