NTE253 Search Results

NTE2534

Abstract: NTE2535
Contextual Info: NTE2534 NPN & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

NTE2539

Contextual Info: NTE2539 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

PNP Monolithic Transistor Pair

Abstract: NTE253MCP DSA0013913 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE253 NPN & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.

NPN VCEO 800V

Abstract: NTE2533 NPN Transistor 1500V 20a
Contextual Info: NTE2533 Silicon NPN Transistor High−Definition Color Display Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified

Contextual Info: NTE2536 NPN & NTE2537 (PNP) Silicon Complementary Transistors High Current Switch Features: D High Current Capacity D Wide ASO Range D Low Saturation Voltage Applications: D Motor Drivers D Relay Drivers D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NPN VCEO 800V

Abstract: NTE2533
Contextual Info: NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified

NTE2538

Contextual Info: NTE2538 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

NTE2531

Abstract: pnp 400v 4a to251 transistor pnp 30V 2A 1W NTE2530
Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver TO251 Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

pnp 400v 4a

Abstract: PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253
Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

10MILLISECOND

Abstract: NTE253 74 ttl
Contextual Info: NTE2532 Integrated Circuit NMOS, 32K EPROM, 300ns Description: The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate

Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.