TO251 Search Results

TO251 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TO-251	Harris Semiconductor	HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE	Original	PDF	29.56KB	2
TO-251	SYNC Power	Package Outline	Original	PDF	29.11KB	1
TO2510	FCI	25 Amp Plastic Silicon Rectifiers	Scan	PDF	89.86KB	2
TO-25-100	Bivar	Wash-Away Spacers - Wash-Away Component and General Purpose Spacers	Original	PDF	446.08KB	1
TO-25-100	Bivar	Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY	Original	PDF		3
TO-25-100E	Bivar	Wash-Away Spacers - Wash-Away Component and General Purpose Spacers	Original	PDF	446.08KB	1
TO-25-100E	Bivar	Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY	Original	PDF		3
TO-25-100ECR	Bivar	Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY	Original	PDF		3
TO-25-100ECRDR	Bivar	Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY	Original	PDF		3
TO-25-120	Bivar	Wash-Away Spacers - Wash-Away Component and General Purpose Spacers	Original	PDF	446.08KB	1
TO-25-120	Bivar	Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY	Original	PDF		3
TO-25-130	Bivar	Wash-Away Spacers - Wash-Away Component and General Purpose Spacers	Original	PDF	446.08KB	1
TO-25-130	Bivar	Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY	Original	PDF		3
TO-25-150E	Bivar	Wash-Away Spacers - Wash-Away Component and General Purpose Spacers	Original	PDF	446.08KB	1

TO-25-150E	Bivar	Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY	Original	PDF		3
TO-251AA	Harris Semiconductor	HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE	Original	PDF	29.56KB	2
TO-251AA Package	International Rectifier	Case Outline and Dimensions	Original	PDF	31.08KB	2
TO-251AA Package	Intersil	3 LEAD JEDEC TO-251AA PLASTIC PACKAGE	Original	PDF	9.21KB	1
TO-251 Package	Intersil	2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE (FOR RECTIFIERS ONLY)	Original	PDF	8.92KB	1

TO251 Price and Stock

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Fischer Elektronik GmbH & Co KG THFU-6-TO-251 Retaining Spring for Transistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	THFU-6-TO-251	Bulk			100	1 - 10 - 100 $0.12 1000 $0.12 10000 $0.12	Buy Now
Bivar Inc TO-25-100 Circuit Board Hardware - PCB Dis-O-Pad TO-25 Round .48 in OD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TO-25-100					1 $0.12 10 $0.08 100 $0.06 1000 $0.05 10000 $0.05	Get Quote
Newark	TO-25-100	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bivar Inc TO-25-100DR Circuit Board Hardware - PCB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TO-25-100DR					1 $0.12 10 $0.08 100 $0.06 1000 $0.05 10000 $0.04	Get Quote
Bivar Inc TO-25-100E Circuit Board Hardware - PCB Dis-O-Pad TO-25 Round .48 in OD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TO-25-100E					1 $0.12 10 $0.08 100 $0.06 1000 $0.05 10000 $0.04	Get Quote
Bivar Inc TO-25-100ECRDR Circuit Board Hardware - PCB Dis-O-Pad TO-25 Round .48 in OD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TO-25-100ECRDR					1 $0.12 10 $0.08 100 $0.06 1000 $0.05 10000 $0.04	Get Quote

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TO251 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE2522 Abstract: NTE2523 Contextual Info: NTE2522 NPN & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch TO251 Features: D High Current Capacity D High Collector−Emitter Saturation Voltage D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	NTE2522 NTE2523 200mA NTE2522 NTE2523	PDF
NTE2524 Abstract: NTE2525 to251 Contextual Info: NTE2524 NPN & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch TO251 Features: D Low Collector−Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	NTE2524 NTE2525 10IB1 -10IB2 NTE2525, NTE2524 NTE2525 to251	PDF
NTE2980 Abstract: 77A DIODE Contextual Info: NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID	Original	NTE2980 00A/s, NTE2980 77A DIODE	PDF
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Contextual Info: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60	PDF
STGD3NC120H Contextual Info: STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet − production data Features • High voltage capability ■ High speed TAB Applications ■ Home appliance ■ Lighting 3 2 1 Description IPAK TO251 This device is a very fast IGBT developed using advanced PowerMESH technology. This	Original	STGD3NC120H GD3NC120H STGD3NC120H-1 STGD3NC120H	PDF
01n60 Abstract: 01N60C3 SPS01N60C3 Contextual Info: SPS01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 01n60 01N60C3 SPS01N60C3	PDF
04N60C3 Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3 Contextual Info: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability	Original	SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3	PDF
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6	PDF
03n60s5 Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5 Contextual Info: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5	PDF
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252	PDF
03n60s5 Contextual Info: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5	PDF
Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.	Original	SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5	PDF
08p06p Contextual Info: SPD08P06P G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -8.8 A • Avalanche rated • dv /dt rated PG-TO252-3 • 175°C operating temperature PG-TO251-3 • Pb-free lead finishing; RoHS compliant	Original	SPD08P06P PG-TO252-3 PG-TO251-3 08P06P SPD08P06PG 08p06p	PDF
SPD01N60S5 Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 Contextual Info: SPU01N60S5 SPD01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 Q67040-S4193 01N60S5 SPD01N60S5 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193	PDF

2n0308 Abstract: C1904 Contextual Info: SPU30N03S2-08 Preliminary data OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature dv/dt rated VDS 30 RDS on 8.2 m ID 30 A V P-TO251 Type Package Ordering Code Marking SPU30N03S2-08 P-TO251 Q67042-S4140	Original	SPU30N03S2-08 P-TO251 Q67042-S4140 2N0308 BSPU30N03S2-08, SPU30N03S2-08 2n0308 C1904	PDF
2N03L10 Abstract: 2N03L Contextual Info: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P- TO251 -3-1 Superior thermal resistance	Original	SPU30N03S2L-10 SPU30N03S2L-10 Q67042-S4042 2N03L10 BSPU30N03S2L-10, 2N03L10 2N03L	PDF
2N0308 Contextual Info: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 8.2 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 •Superior thermal resistance	Original	SPU30N03S2-08 SPU30N03S2-08 Q67042-S4140 2N0308 BSPU30N03S2-08, 2N0308	PDF
20n03l Abstract: IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L Contextual Info: IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance	Original	IPD20N03L IPU20N03L Q67042-S4050 20N03L Q67042-S4106 20n03l IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L	PDF
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5	PDF
07N60S5 Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251	Original	SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5	PDF
RU1HL13K Abstract: ruichips Contextual Info: RU1HL13K P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -100V/-13A, RDS ON =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO251 • 100% avalanche tested	Original	RU1HL13K -100V/-13A, RU1HL13K ruichips	PDF
NTE2528 Abstract: NTE2529 Contextual Info: NTE2528 NPN & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch TO251 Features: D High Voltage and High Current Capacity D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V	Original	NTE2528 NTE2529 10IB1 -10IB2 700mA, NTE2529, NTE2528 NTE2529	PDF
14n03L Abstract: K3530 14n03 IPU14N03L IPU14N03LA Contextual Info: IPU14N03L Preliminary data OptiMOSâ Power-Transistor Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) ID V m 14.4 30 A P-TO251 Superior thermal resistance	Original	IPU14N03L P-TO251 Q67042-S4115 14N03L 14n03L K3530 14n03 IPU14N03L IPU14N03LA	PDF
07n60s5 Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5 Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated	Original	SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 Q67040-S4196 07N60S5 07n60s5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5	PDF

TO251 Search Results

TO251 Datasheets (19)

TO251 Price and Stock

Fischer Elektronik GmbH & Co KG THFU-6-TO-251

Bivar Inc TO-25-100

Bivar Inc TO-25-100DR

Bivar Inc TO-25-100E

Bivar Inc TO-25-100ECRDR

TO251 Datasheets Context Search

NTE2522

NTE2524

NTE2980

SP*02N60

STGD3NC120H

01n60

04N60C3

02N60C3

03n60s5

02N60S5

03n60s5

08p06p

SPD01N60S5

2n0308

2N03L10

2N0308

20n03l

SPD02N60S5

07N60S5

RU1HL13K

NTE2528

14n03L

07n60s5