NTE332 Search Results
NTE332 Price and Stock
NTE Electronics Inc NTE3320Single Igbt, 600V, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:200W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:-; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE3320 |
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NTE3320 | Bulk | 1 |
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NTE Electronics Inc NTE3322Single Igbt, 900V, 60A; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:200W; Collector Emitter Voltage Max:900V; No. Of Pins:3Pins; Operating Temperature Max:-; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE3322 |
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NTE3322 | Bulk | 1 |
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NTE Electronics Inc NTE332Transistor PNP Silicon 100V IC=15A TO-220 Case Compl To NTE331 |
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NTE Electronics Inc NTE3323INSULATED GATE BIPOLAR TRANSISTOR, 25A I(C), 1200V V(BR)CES, N-CHANNEL |
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NTE332 Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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NTE332 |
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Silicon Complementary Transistor Audio Power Amp, Switch | Original | 21.23KB | 2 | |||
NTE332 |
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Bipolar Transistors | Scan | 120.13KB | 1 | |||
NTE332 |
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp Switch, Pkg Style TO220 | Scan | 34.06KB | 1 | |||
NTE3320 |
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Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.56KB | 2 | |||
NTE3321 |
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Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.66KB | 2 | |||
NTE3322 |
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Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.66KB | 2 | |||
NTE3323 |
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Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.53KB | 2 | |||
NTE332MCP |
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Bipolar Transistors | Scan | 120.13KB | 1 |
NTE332 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NTE3321Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3321 NTE3321 | |
NTE3323Contextual Info: NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3323 NTE3323 | |
074c
Abstract: NTE3322
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NTE3322 -20A/s 074c NTE3322 | |
NTE3321Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3321 NTE3321 | |
NTE3322Contextual Info: NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3322 NTE3322 | |
NTE3320Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3320 NTE3320 | |
NTE3320Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3320 NTE3320 | |
Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3320 | |
NTE331
Abstract: NTE332
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NTE331 NTE332 NTE331 NTE332 | |
NTE332
Abstract: NTE3323
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NTE3323 NTE332 NTE3323 | |
NTE3322Contextual Info: NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3322 NTE3322 | |
Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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NTE3321 | |
HIGH VOLTAGE DIODE for microwave ovens
Abstract: NTE109 NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344
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NTE834 NTE922M NTE943M NTE109 NTE525 NTE506 DO-41 DO-41 HIGH VOLTAGE DIODE for microwave ovens NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l | |
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
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100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 | |
123AP
Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
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123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130 | |
NTE135A
Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
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NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159 | |
332MCP
Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
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OCR Scan |
297MP NTE297 NTE297) T0202 NTE307) 300MP NTE300 27MHz) NTE332) 332MCP NTE307 27MHz rf transmitter NTE332 NTE297 NTE300 T072 T092 |