NTE68 Search Results

NTE6821

Abstract: PB616
Contextual Info: NTE6821 Integrated Circuit Peripheral Interface Adapter PIA , NMOS, 1MHz Description: The NTE6821 is a peripheral interface adapter (PIA) in a 40–Lead DIP type package capable of interfacing the Microprocessing Unit (MPU) to peripherals through two 8–Bit bidirectional peripheral data

Contextual Info: N T E ELECTRONICS baiasi 55E T> INC Q Q D 2 CIQ3 05Ô W N T E RG-UITS Includes Peripherals NMOS, Asynchronous 24-Lead DIP, See DIag. 252 Communications Interface Adapter (ACIA) NMOS, TWo-Phase 16-Lead DIP, See DIag. 249 Generator/Driver for NTE6800 T -H U -03,

NTE75452B

Abstract: NTE75451B NTE75492B
Contextual Info: INTEGRATED CIRCUITS - DISPLAY DRIVERS NTE6885, 16-Lead DIP, See Diag. 249 NTE6886 High Speed Hex 3-State Buffer w/Common Enable Enable 1 Q Vcc Input A B Q Enable 2 Output A Q H Input F Input B Q Q Output F Output B n Q Input E Input C |jl O utput C Q j GND H |

NTE6821

Contextual Info: NTE6821 Integrated Circuit Peripheral Interface Adapter PIA , NMOS, 1MHz Description: The NTE6821 is a peripheral interface adapter (PIA) in a 40–Lead DIP type package capable of interfacing the Microprocessing Unit (MPU) to peripherals through two 8–Bit bidirectional peripheral data

NTE6810

Contextual Info: NTE6810 Integrated Circuit 128 x 8–Bit Static Random Access Memory SRAM Description: The NTE6810 is a byte–orgainzed memory in a 24–Lead DIP type package designed for use in bus– organized systems. It is fabricated with N–channel silicon–gate technology. For ease of use, this

Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE6821 40-Lead DIP, See Diag. 399 NMOS, Peripheral Interface Adapter (PIA) for NTE6800 V s s r i^ - PAO PA1 PA2 PA3 O Ü 1 1 PA4 PA5 PA6 PA7 PB0 1 1 1 f Q P RSO 3 S RS1 RESET 2 DO Rx Data H Cx Clk § 1

NTE75189

Abstract: NTE75491B NTE75493 NTE75492B NTE75188 NTE75451B NTE75452B NTE75450B NTE75494 NTE75
Contextual Info: INTEGRATED CIRCUITS - DISPLAY DRIVERS NTE6885, 16-Lead DIP, See Diag. 249 NTE6886 High Speed Hex 3-State Buffer w/Oommon Enable E nable 1 Q l NTE6887, 16-Lead DIP, See Diag. 249 NTE6888 High Speed Hex 3-State Buffer w/2 & 4 Line Enable E na b le 4 Q O utp ut A Q

74LS

Abstract: M6800 NTE6885 NTE6886 NTE6887 NTE6888
Contextual Info: NTE6885 thru NTE6888 Integrated Circuit Hex 3–State Buffer/Inverter Description: The NTE6885 thru NTE6888 series of devices combines three features usually found desirable in bus–oriented systems: 1 High impedance logic inputs insure that these devices do not seriously load

car wiring diagram

Abstract: nte778a remote control car circuit diagram NTE778 NTE6860 MMD6150 MMD7000 electric diagram for car remote control
Contextual Info: NTE6860 Integrated Circuit NMOS – FSK Digital Modem, 600bps Description: The NTE6860 is a MOS subsystem in a 24–Lead DIP type plastic package designed to be integrated into a wide range of equipment utilizing serial data communications. The modem provides the necessary modulation, demodulation and supervisory control functions to

NTE388

Abstract: NPN 250W NTE68 NTE68MCP
Contextual Info: NTE388 NPN & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

NTE6809E

Abstract: NTE6809 M6800 A0833
Contextual Info: NTE6809 & NTE6809E Integrated Circuit NMOS, 8–Bit Microprocessor MPU Description: The NTE6809 and NTE6809E are revolutionary high performance 8–bit microprocessors in 40–Lead DIP type packages which support modern programming techniques such as position independece,

NTE6880

Abstract: NTE6889
Contextual Info: NTE6880 & NTE6889 Integrated Circuit Bidirectional Bus Transceiver Description: The NTE6880 and NTE6889 consists of 4 pairs of TRI–STATE logic elements configured as quad bus drivers/receivers along with separate buffered receiver enable and driver enable lines.

Contextual Info: NTE68 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)400 I(C) Max. (A)16 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

NTE6800

Abstract: NTE6850 NTE6860 DSA003704
Contextual Info: NTE6850 Integrated Circuit NMOS, Asynchronous Communications Interface Adapter Description: The NTE6850 Asynchronous Communications Interface Adapter provides the data formatting and control to interface serial asynchronous data communications information to bus organized systems

NTE382

Abstract: t0218 NTE377 NTE373 NTE374 RF POWER AMP NTE390 25w audio NTE378 NTE398
Contextual Info: N T E ELECTRONICS INC S2E D • bMaiSS'i QQG2bDS 1SÖ B N T E TRANSISTSRSBUPOLAR I T—33—01 Maximum Breakdown Voltage NTH TVP* Number Polarity and Material Description and Application 362 NPN-Si RF Power Amp P0 = 2W, 4 0 7 -5 1 2MHZ 363 NPN-Si RF Power Amp

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

Contextual Info: T E ELECTRONICS INC ^ r i ^ S ^ b M 3 Ì 5 s T o a D S T Ó 5 ^ 1 • N TE M È M S LiilS. Includes Peripherals NM OS, 8 Bit 40-Lead DIP, See Dlag. 299 Microprocessor (MPU), 1MHz !JjJ R E S E T VSS I NM OS, 8 Bit 40-Lead DIP, See Diag. 299 Microprocessor (MPU)

NTE2055

Contextual Info: MISCELLANEOUS INTEGRATED CIRCUITS NTE2047 16-Lead DIP, See Diag. 249 Universal, Low Speed Modem, 0 - 600bps MOS NTE2055 24-Lead DIP, See Diag. 252 CMOS, 3 1/2 Digit A/D Converter NTE2057 28-Lead DIP, See Diag. 253 Dual 16-B it D/A Converter for CD & DAT Players, V DD = 5V Typ

Contextual Info: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array

NTE6802

Abstract: NTE6532
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE6507 28-Lead DI P, See Diag. 253 NMOS, 8-B it Microprocessor (MPU) w/On Chip Clock OSC R E 3 rf_V - / _ Q 0 2 (Outp) V ssH Q 0 0 (In) NTE6508 16-Lead DIP, See Diag. 249 CMOS, 1K Static RAM (SRAM), 300ns

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

t0218

Abstract: 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio
Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) typical <T Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BV ebo Ufe Pd

NTE55

Abstract: nte59 NTE38
Contextual Info: M a x im u m B re a k d o w n V o ltage C o lle c to r to B a se Volts C o lle c to r to E m itte r (V olts) E m itter to Base (Volts) Typical Forw ard C u rren t G ain M axim u m C o lle c to r Power D issip atio n (W atts) Case S tyle D iag. No. M axim u m