OEFL Search Results

Contextual Info: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency

bwh molded wirewound resistor

Abstract: bwh series bwh series resistor 22RC20
Contextual Info: 0 / SP20F Series GeneralFailsafe Purpose Failsafe eral Purpose Molded Wirewound ed Wirewound Resistor Resistor SPH/SPF Series 'ENERAL0URPOSE&AILSAFE Fusible 10% tolerance • SPF is fusible -OLDED7IREWOUND2ESISTOR m to 1200 ohms · ±5%, ±10% tolerance

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BU RR -BR O W N «! I OPA644 1 DEMO BOARD AVAILABLE See Appendix A Low Distortion Current Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • SLEW RATE: 2500V/|is The OPA644 is a wideband precision current feed­

AN-219

Abstract: DAC-8800 DAC-8841 dac8800 base-10
Contextual Info: ANALOG ► DEVICES AN-219 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Electronic Adjustment Made Easy with the TrimDAC by W alter Heinzer and Joe Buxton The TrimDAC is a multi-channel d/a converter designed

3165* intel

Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
Contextual Info: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 28F200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B

T39 diode

Contextual Info: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,

Contextual Info: HM5164165F Series HM5165165F Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh HITACHI ADE-203-1058(Z) Preliminary Rev. 0.0 May. 25, 1999 Description The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304word x 16-bit. They have realized high performance and low power by employing CMOS process technology.

Contextual Info: HM5164805F Series HM5165805F Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-1057 (Z) Preliminary Rev. 0.0 May. 25, 1999 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word x 8-bit. They have realized high performance and low power by employing CMOS process

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bb53T31 0D2BEB7 b23 I IAPX L BU705F BU705DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn power transistors in a SOT199 envelope intended fo r use in horizontal deflection circuits o f television receivers. The BU705DF has an integrated efficiency diode.

fll57

Contextual Info: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config­ ured as a basic rate ISDN TE or NT or as a syn­

SCN2681

Abstract: SCN2681T SCN2681TC1A44 SCN2681TC1N40
Contextual Info: INTEGRATED CIRCUITS SCN2681T Dual asynchronous receiver/transmitter DUART Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 711002b 0 G CJ0E7C} 32b This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors

Diode SOT-23 marking 27

Abstract: TRANSISTOR SMD MARKING CODE w6 Zener diode smd marking code 51 y Zener diode smd marking code 2A 2A transistor smd SOT-23 Zener Diode SOT-23 marking B TRANSISTOR SMD MARKING CODE y12 SMD Transistor Y12 TRANSISTOR SMD MARKING CODE 81c TRANSISTOR SMD MARKING CODE LF
Contextual Info: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 015 • cen T - SMD Zener Diode SOT-23 Case 350mW W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,

BGY582

Abstract: BGY583 DIN45004B
Contextual Info: Philips Semiconductors bbSBTBl 0035304 255 CATV amplifier modules — ^ • Extrem ely low noise 1 input • Silicon nitride passivation 2 comm on • Rugged construction 3 comm on • Optim al reliability ensured by 5 +VB TiPtAu m etallized crystals. 7 comm on

Contextual Info: OTI-051 1.0 INTRODUCTION TO THE OTI-051 SYSTEM CONTROLLER OTI-051 isacustom integrated circuit designed for theOaKHonzonchip set running with 80286 and 80386SX microprocessors. Thechip provides all the system support logic for the system. It integrates all the functions of CPU interface and data flow control.

Am29130 16 to 30 Bit Shift Register

Abstract: Fuse-Programmable PROM tc004050 am29516 Am28130 Fuse-Programmable controller LHD-14 Am29130 ZD15L
Contextual Info: // Am 2 9 1 3 0 16-Bit Barrel Shifter PR ELIM IN A R Y ' £ '& l / ‘ > i DISTINCTIVE CHARACTERISTICS • • Powerful Shifter - Shifts or rotates left/right with a two's-complement or a sign-magnitude shift count. Bit Insertion - Inserts a fill bit depending on the position from the

PA 66 GF 15

Abstract: KNIT 10720739 A9010 10720102
Contextual Info: 1 12 10 11 Pos. A A -A « I 18.5 ±0.15 6,5 mi 1 Lam ellen-Dichtung ~ l IQ-Nr.: Port-No. 403 423 15344030 403 402 10719437 403 3% 12177111 402 323 I072073Ç 405 278 10720102 405 277 10720101 4033% 12177111 402 323 Seal m m ? . Benennung Title Flachsteckhülsenqehäuse 3 pol.

MIL-R55342E

Abstract: PAR/PDS3S140 PAR/DMG9N65CT PAR/AP13005 PAR/DF06S PAR/SF30JG-B PAR/LS17-203W31 PAR/LS17 PAR/4100K PAR/LS17-202W27
Contextual Info: tal Glaze Cylindrical Metal Glaze™ Cylindrical cial Official Size Size Power Resistor wer Resistor Metal Glaze™ Cylindrical Metal Glaze™ thick film element fired at 1000°C to solid ceramic substrate CHP1X Series ohm Size •Official 0.1 ohm to 10K

RLR Resistor

Abstract: RLR20C MIL-R-39017
Contextual Info: STABLISHED2ELIABILITY Established Reliability Mil-Qualified Metal Glaze Resistor L 1UALIlED ETAL'LAZE˜2ESISTOR %STABLISHED2ELIABILITY RLR Series • 1/8 watt to 1/2 watt -IL 1UALIlED · TCR of ±100 ppm/°C WATTTOWATT -ETAL'LAZE˜2ESISTOR · 1% and 2% tolerance

Contextual Info: CK&ILM IGH6OLTAGE Thick Film High Voltage/ High Reliability MIL-Approved H2ELIABILITY- , !PPROVED Metal Glaze Resistors TAL'LAZE˜2ESISTORS 4HICK&ILM(IGH6OLTAGE CMH Series •(IGH2ELIABILITY-), !PPROVED 1/4 watt to 5 watt TTOWATT· TCR of ±100 ppm/°C

GG1Q

Contextual Info: DATASHEET PM PMC-970133 ISSUE2 PRELIMINARY 1 PMC-Sierra, Inc. PMS342 spbctra -155 SONET/SDH PA YLOAD EXTRACTOR/ALIGNER FEATURES • Monolithic SONET/SDH PAYLOAD EXTRACTOR/ALIGNER for use in STS-1 STM-0/AU3 , STS-3 (STM-1/AU3) or STS-3c (STM-1 /AU4) interface

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

Contextual Info: bßE D l»ÔES?1 0D14D5Ö 353 INTEGRATED DEVICE CMOS DUAL-PORT RAM 32K 4K x 8-BIT WITH SEMAPHORE IDT71342SA IDT71342LA FEATURES: DESCRIPTION: • High-speed access The ID T71342 is an extrem ely high-speed 4K x 8 Dual- Port S tatic RAM with full on-chip hardw are support of sem aphore

AR 5414

Abstract: 6AR8 TUBE 6ar8 ECTF 6ARS resistor 300 resistor 300 ohms
Contextual Info: 6AR8 TUNO-SOL SHEET-BEAM TUBE M IN IA T U R E hs- T Y PE 7" COATED U N IP O T E N T IA L MAX HEATER ¿ 8 MAX T-6-g- CATHODE 6-3 VOLTS 0 . 3 AM P. AC OR DC ‘ 6 MAX ANY M O U N T IN G P O S I T I O N GLASS BULB S M A L L BUTTON 9 PIN BASE P I N # 5 SHOULD BE CONNECTED

HY2316000

Contextual Info: HY2316000 Series ••HYUNDAI 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316000 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS