OM2860 Search Results

inductive proximity

Abstract: PHILIPS discrete LED OM2860 OM2870
Contextual Info: Philips Sem icond uctors Data sheet status Prod uct Sp ecification date of issue August 1990 OM2860/C3M2870 Hybrid integrated circuits for inductive proximity detectors FEATURES • • • • Extra small dim ensions. W ide range o f supply voltage. High o u tpu t current.

Contextual Info: OM2860 Linear ICs Alarm/Security Circuit statusû Output TypeLinear V P D Max. (W) Nom. Supp (V)24 Minimum Operating Temp (øC)-40 Maximum Operating Temp (øC)85 Package StyleN/A Mounting StylePinout Equivalence CodeN/A # PinsN/A Ckt. (Pinout) Number DescriptionHybrid IC for Inductive proximity detectors

PHILIPS discrete LED

Contextual Info: Philips Semiconductors Data sheet status Product Specification date of issue August 1990 PHILIPS OM2860/OM2870 Hybrid integrated circuits for inductive proximity detectors FEATURES • Extra small dim ensions. 711Gfl2b 0047110 LÔ3 • P H I N 5L>E D INTERNATIONAL

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbS3^31 0032715 7b4 H A P X Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ OM3105N FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max.

PROXIMITY inductive ic

Abstract: metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P
Contextual Info: N AUER P H IL IP S / DI SC R ET E b^E D m bb53T31 D03EB01 BAPX Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ OM31Q5P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max.

optocoupler pnp or npn

Abstract: PROXIMITY inductive ic HYBRID SEMICONDUCTORS metal detectors IC optocoupler pnp OM2860 OM3105N OM3105P OM3115N OM3115P
Contextual Info: 711QflEb 0 G 7 n ? l Philips Semiconductors STB » P H I N Preliminary specification Hybrid integrated circuits for inductive 7 . j* . * proximity detectors OM3105P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max. The OM3105P is a hybrid integrated circuit intended for

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

Contextual Info: Philips Semiconductors Semiconductor Sensors Replacement list REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REPLACED BY REASON FOR DELETION KM110B/1 Discontinued

KMA10

Abstract: SC17 Philips KM110BH KMA20 Discrete Semiconductors KTY86-205 SC17 KMI15/1 OM391 Philips Sensors handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Replacement list Semiconductor Sensors 1996 Nov 25 File under Discrete Semiconductors, SC17 Philips Semiconductors Semiconductor Sensors Replacement list REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version:

optocoupler ic 7811

Abstract: optocoupler using 7811 pot 3296 small TRANSISTOR 5101 pb 817 Optocoupler datasheet Optocoupler 601 PROXIMITY inductive ic OM2860 OM3105N OM3105P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET OM3105P Hybrid integrated circuits for inductive proximity detectors Preliminary specification File under Discrete Semiconductors, SC17 Philips Semiconductors January 1994 Philips Semiconductors Preliminary specification

OM3105N

Abstract: metal detectors IC optocoupler pnp PROXIMITY inductive ic OM2860 OM3105P OM3115N OM3115P
Contextual Info: 7 1 iaasb 0071^5 STT • PHIN Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ QM3105N FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max. The OM3105N is a hybrid integrated circuit intended for

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • £,^53^31 0D337b3 ISM « A P X Philips Sem iconductors D ata sheet status Product Specification d a te o f issue August 1990 FEATURES • • • • Extra small dimensions. Wide range of supply voltage. High output current.

PROXIMITY inductive ic

Abstract: metal detectors IC OM2860 OM2870
Contextual Info: N AMER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product Specification date of issue August 1990 FEATURES • Extra small dimensions. • Wide range of supply voltage. • High output current. • Well proven oscillator stage using discrete transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Contextual Info: OM2 SERIES MODULAR SIGNAL CONDITIONING SYSTEM FOR STRAIN GAGE BRIDGES, MV AND OTHER SENSOR SIGNALS OM2 Series OM2-163 Modules Shown with OM2-8608 Eight-position Backplane MADE IN USA $ 280 Basic Unit ߜ Compact, Light and Convenient to Use ߜ Easy Access to

PHILIPS discrete LED

Abstract: OM31 7b4 tube metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P proximity detectors
Contextual Info: N AMER P H IL IP S /D IS C R E T E b=ÎE D bbSa^l D D 3 2 7 ‘1S 7 b 4 I APX Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ OM31Q5N FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max.